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UCC53x0 是单通道隔离式栅极驱动器系列,旨在驱动 MOSFET、IGBT、SiC MOSFET 和 GaN FET (UCC5350SBD)。UCC53x0S 提供分离输出,可分别控制上升和下降时间。UCC53x0M 将晶体管的栅极连接到内部钳位,以防止米勒电流造成假接通。UCC53x0E 的 UVLO2 以 GND2 为基准,以获取真实的 UVLO 读数。
UCC53x0 采用 4mm SOIC-8 (D) 或 8.5mm SOIC-8 (DWV) 封装,可分别支持高达 3kVRMS 和 5kVRMS 的隔离电压。凭借这些各种不同的选项,UCC53x0 系列成为电机驱动器和工业电源的理想之选。
与光耦合器相比,UCC53x0 系列的器件间偏移更低,传播延迟更小,工作温度更高,并且 CMTI 更高。
可订购器件型号(1)(2) | 最低拉电流和灌电流 | 说明 |
---|---|---|
UCC5310MC | 2.4A 和 1.1A | 米勒钳位 |
UCC5320SC | 2.4A 和 2.2A | 分离输出 |
UCC5320EC | 2.4A 和 2.2A | UVLO 以 IGBT 发射极为基准 |
UCC5350MC | 5A 和 5A | 米勒钳位 |
UCC5350SB | 5A 和 5A | 具有 8V UVLO 的分离输出 |
UCC5390SC | 10A 和 10A | 分离输出 |
UCC5390EC | 10A 和 10A | UVLO 以 IGBT 发射极为基准 |
DEVICE OPTION(1) | PACKAGE | MINIMUM SOURCE CURRENT | MINIMUM SINK CURRENT | PIN CONFIGURATION | UVLO | ISOLATION RATING |
---|---|---|---|---|---|---|
UCC5310MC | D | 2.4 A | 1.1 A | Miller clamp | 12 V | 3-kVRMS |
DWV | 5-kVRMS | |||||
UCC5320EC | D | 2.4 A | 2.2 A | UVLO with reference to GND2 | 12 V | 3-kVRMS |
UCC5320SC | D | 2.4 A | 2.2 A | Split output | 12 V | 3-kVRMS |
DWV | 5-kVRMS | |||||
UCC5350MC | D | 5 A | 5 A | Miller clamp | 12 V | 3-kVRMS |
DWV | 5-kVRMS | |||||
UCC5350SB | D | 5 A | 5 A | Split Output | 8 V | 3-kVRMS |
UCC5390EC | D | 10 A | 10 A | UVLO with reference to GND2 | 12 V | 3-kVRMS |
DWV | 5-kVRMS | |||||
UCC5390SC | D | 10 A | 10 A | Split output | 12 V | 3-kVRMS |
PIN | TYPE(1) | DESCRIPTION | |||
---|---|---|---|---|---|
NAME | NO. | ||||
UCC53x0S | UCC53x0M | UCC53x0E | |||
CLAMP | — | 7 | — | I | Active Miller-clamp input found on the UCC53x0M used to prevent false turnon of the power switches. |
GND1 | 4 | 4 | 4 | G | Input ground. All signals on the input side are referenced to this ground. |
GND2 | — | — | 7 | G | Gate-drive common pin. Connect this pin to the IGBT emitter. UVLO referenced to GND2 in the UCC53x0E. |
IN+ | 2 | 2 | 2 | I | Noninverting gate-drive voltage-control input. The IN+ pin has a CMOS input threshold. This pin is pulled low internally if left open. Use Table 8-4 to understand the input and output logic of these devices. |
IN– | 3 | 3 | 3 | I | Inverting gate-drive voltage control input. The IN– pin has a CMOS input threshold. This pin is pulled high internally if left open. Use Table 8-4 to understand the input and output logic of these devices. |
OUT | — | 6 | 6 | O | Gate-drive output for UCC53x0E and UCC53x0M versions. |
OUTH | 6 | — | — | O | Gate-drive pull-up output found on the UCC53x0S. |
OUTL | 7 | — | — | O | Gate-drive pull-down output found on the UCC53x0S. |
VCC1 | 1 | 1 | 1 | P | Input supply voltage. Connect a locally decoupled capacitor to GND. Use a low-ESR or ESL capacitor located as close to the device as possible. |
VCC2 | 5 | 5 | 5 | P | Positive output supply rail. Connect a locally decoupled capacitor to VEE2. Use a low-ESR or ESL capacitor located as close to the device as possible. |
VEE2 | 8 | 8 | 8 | P | Negative output supply rail for E version, and GND for S and M versions. Connect a locally decoupled capacitor to GND2 for E version. Use a low-ESR or ESL capacitor located as close to the device as possible. |