SNIK003 August   2022 TMP9R00-SP

 

  1.   Abstract
  2.   Trademarks
  3. 1Device Information
    1. 1.1 Product Description
    2. 1.2 Device Details
  4. 2Total Dose Test Setup
    1. 2.1 Test Overview
    2. 2.2 Test Description and Facilities
    3. 2.3 Test Setup Details
    4. 2.4 Test Configuration and Condition
  5. 3Tested Parameters
  6. 4Total Ionizing Dose Characterization Test Results
    1. 4.1 Total Ionizing Dose Characterization Summary Results
  7. 5References
  8.   A TID Reports

3 Tested Parameters

HDR devices were stressed at 3 krad(Si), 10 krad(Si), 30 krad(Si), 50 krad(Si), 75 krad(Si), 100 krad(Si) for biased conditions. LDR devices were stressed at 30 krad(Si), 75 krad(Si), and 100 krad(Si) for biased and unbiased conditions.

Table 3-1 TMP9R00-SP Specification Compliance Matrix
Parameters Conditions MIN TYP MAX Unit
Local temperature sensor accuracy TA = 20°C to 30°C –0.35 ±0.125 0.35 °C
Local temperature sensor accuracy TA = –55°C to 125°C –0.75 ±0.125 0.75 °C
Local temperature sensor accuracy TA = –55°C to 125°C –1.5 ±0.5 1.5 °C
Remote temperature sensor accuracy TA = –10°C to 50°C
TD = –80°C to 150°C,		 –0.75 ±0.125 0.75 °C
Remote temperature sensor accuracy TA = –55°C to 125°C
TD = –55°C to 150°C		 –2 ±0.5 2 °C
Local Temperature Error Supply Sensitivity –0.25 ±0.05 0.25 °C/V
Local Temperature Error Supply Sensitivity –0.15 ±0.05 0.15
Remote Temperature Error Supply Sensitivity –0.25 ±0.1 0.25 °C/V
Remote Temperature Error Supply Sensitivity –0.5 ±0.1 0.5 °C/V
Temperature resolution (local and remote) 0.0625 °C
ADC conversion time One-shot mode, per channel (local or remote) 16 17 ms
ADC resolution 13 Bits
High Series resistance 1 kΩ (max) 120 µA
Medium Series resistance 1 kΩ (max) 45 µA
Low Series resistance 1 kΩ (max) 7.5 µA
Remote transistor ideality factor η-Factor Correction registers = 0000h 1.008
High-level input voltage 0.7 × (V+) V
Low-level input voltage 0.3×(V+) V
Hysteresis 200 mV
SDA output-low sink current 20 mA
Low-level output voltage IO = –20 mA; V+ ≥ 2 V 0.15 0.4 V
Low-level output voltage IO = –15 mA; V+ < 2 V 0.2×(V+) V
Serial bus input leakage current 0 V ≤ VIN ≤ 3.6 V –1 1 μA
Serial bus input capacitance 11 pF
High-level input voltage 0.7 × (V+) V
Low-level input voltage –0.3 0.3×(V+) V
Input leakage current 0 V ≤ VIN ≤ 3.6 V –1 1 μA
Input capacitance 4 pF
Output-low sink current VOL = 0.4V 6 mA
Low-level output voltage IO = –6 mA 0.15 0.4 V
High-level output leakage current VO = V+ 1 μA
Specified supply voltage range 1.7 2.0 V
Specified supply voltage range 1.7 2.3 V
Quiescent current Active conversion, local sensor 240 375 µA
Quiescent current Active conversion, remote sensors 400 600 µA
Quiescent current Standby mode (between conversions) 15 21 µA
Quiescent current Shutdown mode, serial bus inactive 0.3 4 µA
Quiescent current Shutdown mode, serial bus active, fS = 400 kHz 120 µA
Quiescent current Shutdown mode, serial bus active, fS = 2.56 MHz 300 µA
Power-on reset threshold Rising edge 1.5 1.65 V
Power-on reset threshold Falling edge 1.0 1.2 1.35 V
Power-on reset hysteresis 0.2 V