SLVK326 May   2026 ADS1278QML-SP

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Introduction
  5. 2Single-Event Effects (SEE)
  6. 3Device and Test Board Information
  7. 4Irradiation Facility and Setup
  8. 5LETEFF and Range Calculation
  9. 6Test Setup and Procedures
  10. 7Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
  11. 8Summary
  12. 9References

5 LETEFF and Range Calculation

Accounting for energy loss through the degrader, copper foil, beam port window, air gap, and the BEOL stack of the ADS1278QML-SP, the effective LET (LETEFF) at the surface of the silicon substrate and the range was determined with SEUSS 2024 software (provided by TAMU and based on the latest SRIM-2013 [7] models)

The results are shown in Table 5-1.

Table 5-1 Ion LETEFF and Range in Silicon
Facility

Beam

Energy

(MeV/ nucleon)

Ion Type

Degrader

Steps (#)

Degrader

Angle (°)

Copper

Foil Width

(μm)

Beam Port

Window

Air Gap

(mm)

Angle of

Incidence (°)

LETEFF

(MeV·cm2/ mg)

Range in

Silicon

(μm)

TAMU 15 109Ag 0 0 - 1-mil Aramica 40 15 51 130