SLVK244 January   2026 TRF0213-SEP

 

  1.   1
  2.   2
  3.   Trademarks
  4. 1Overview
  5. 2Single-Event Effects
  6. 3Test Device and Evaluation Board Information
  7. 4Irradiation Facility and Setup
  8. 5Depth, Range, and LETEFF Calculation
  9. 6Test Set-Up and Procedures
  10. 7Single-Event Latch-up (SEL) Results
  11. 8Single-Event Transients (SET) Results
  12. 9Summary
  13.   A Total Ionizing Dose from SEE Experiments
  14.   B References

2 Single-Event Effects

The primary concern for the TRF0213-SEP is the resilience against the destructive single-event effects (DSEE), such as single-event latch-up (SEL) and single-event-burnout (SEB). Since the operating voltage of TRF0213-SEP is relatively low, 5V, SEB is not a concern.

The TRF0213-SEP was characterized for SEL events. In mixed technologies, such as the Bi-CMOS process used for the TRF0213-SEP, the presence of the CMOS circuitry introduces a potential SEL susceptibility. SEL can occur if excess current injection caused by the passage of an energetic ion is high enough to trigger the formation of a parasitic cross-coupled PNP and NPN bipolar structure (formed between the p-substrate and n-well and n+ and p+ contacts) [1][2]. If formed, the parasitic bipolar structure creates a high-conductance path (creating a steady-state current that is orders-of-magnitude higher than the normal operating current) between power and ground that persists (is “latched”) until power is removed or until the device is destroyed by the high-current state. The TRF0213-SEP exhibited no SEL with heavy-ions of up to LETEFF = 56.1 MeV-cm2/mg at fluences in excess of 107 ions/cm2 and a die temperature of 125°C.

Another concern on high reliability and performance applications is the single-events-transient (SET) characteristic of the device. The TRF0213-SEP SET performance was characterized up to LETEFF = 56.1 MeV-cm2/mg. The device was primarily characterized for SET at a typical recommended operating supply voltage of +5V and information-only up to an absolute maximum voltage of +5.5V under AC input conditions. Test conditions and results are discussed in Section 8.