SLVK244 January 2026 TRF0213-SEP
- 1
- 2
- Trademarks
- 1Overview
- 2Single-Event Effects
- 3Test Device and Evaluation Board Information
- 4Irradiation Facility and Setup
- 5Depth, Range, and LETEFF Calculation
- 6Test Set-Up and Procedures
- 7Single-Event Latch-up (SEL) Results
- 8Single-Event Transients (SET) Results
- 9Summary
- A Total Ionizing Dose from SEE Experiments
- B References
5 Depth, Range, and LETEFF Calculation
TRF0213-SEP is fabricated in the TI BiCMOS process and the die is packaged as a flip chip. The decapped unit exposes the silicon substrate directly when packaged in the flip-chip configuration. The units used were background to 50 microns, for proper ion penetration. The effective LET (LETEFF), depth, and range were determined with the custom RADsim - IONS application (developed at Texas Instruments and based on the latest SRIM2013 [5] models). The applications accounts for energy loss through the 1-mil thick Aramica (DuPont®Kevlar®) beam port window and the air gap between the DUT and the heavy-ion exit port is 40mm. An image of the RADsim - IONS is shown in Figure 5-1 and the ions details are presented in Table 5-1.
Figure 5-1 GUI of RADsim Application Used to Determine Key Ion Parameters| Ion Type | Angle of Incidence (°) | Depth in Silicon (µm) | Range in Silicon (µm) | LETEFF (MeV-cm2/mg) | Distance (mm) |
|---|---|---|---|---|---|
| N(14) | 0 | 50 | 50 | 1.42 | 40 |
| Ne(20) | 0 | 50 | 50 | 3.01 | 40 |
| Ar(40) | 0 | 50 | 50 | 9.75 | 40 |
| Cu(63) | 0 | 50 | 50 | 24.54 | 40 |
| Kr(84) | 0 | 50 | 50 | 36.1 | 40 |
| Ag(109) | 0 | 50 | 50 | 57.73 | 40 |