SLVK244 January   2026 TRF0213-SEP

 

  1.   1
  2.   2
  3.   Trademarks
  4. 1Overview
  5. 2Single-Event Effects
  6. 3Test Device and Evaluation Board Information
  7. 4Irradiation Facility and Setup
  8. 5Depth, Range, and LETEFF Calculation
  9. 6Test Set-Up and Procedures
  10. 7Single-Event Latch-up (SEL) Results
  11. 8Single-Event Transients (SET) Results
  12. 9Summary
  13.   A Total Ionizing Dose from SEE Experiments
  14.   B References

8 Single-Event Transients (SET) Results

The TRF0213-SEP was characterized for SETs from 1.42 to 56.1MeV-cm2/mg (refer to Table 5-1) at +5V, +5.5V supply voltages. The device was tested at room temperature for all SETs runs. Since the TRF0213-SEP is a flip chip device, the devices were thinned to 50µm for proper heavy-ion penetration into the active circuits. Flux of 104 (most used) ions/cm2-s and fluence of 2 x 106 ions/cm2 per run were used during the heavy ion characterization. The devices were tested under dynamic (AC) inputs (as described in Section 6). The SETs discussed in this report were defined as output voltages excursion that exceed a window trigger set on the MSO58B. Outputs of the TRF0213-SEP were converted to SE using HL9404 balun and monitored. Test conditions used during the testing are presented in Table 8-1. Weibull-Fit and cross section for Unit #4 are presented in Figure 8-1. To calculate the cross section values at different supply voltages the total number of upsets (or transients) and the fluences where combined (add together) by LETEFF to calculate the upper bound cross section (as discussed in Single-Event Effects Confidence Interval Calculations) at 95% confidence interval. The σPERCASE (each row is a case) cross section presented in Table 8-1, was calculated using the MTBF method at 95% confidence. For the SET test, upsets were observed when setting the window trigger to ±20mV and monitoring the output of the balun. Worst case AC upset is shown in Figure 8-2. Though not observed during the testing, note that an SET event can result in output going up to saturation voltage. It was observed that all events recovered in less than 200ns throughout the testing period.

The upper-bound SET cross-sections (σALL) was calculated using the events and fluences. Cross-section points for each case are plotted in Figure 8-1 while the Weibull curve fit is generated only using VDD = 5V cases. Using the MTBF method at 95% confidence interval (see Single-Event Effects Confidence Interval Calculations for a discussion of the MTBF cross section calculation method), the combined upper bound cross section is:

σSET-ALL-AC-DIFF ≤ 8 × 10–5cm2/device at LET = 56.1MeV-cm2/mg, T = 25°C, 95% conf. and VDD = +5V, +5.5V

Table 8-1 Summary of the TRF0213-SEP AC Tests at 25°C Exposed Die Temperature(1)

Run #(2)

Unit #

VDD (V)

Ion Type

LETEFF
(MeV-cm²/mg)

Average Flux (× 103 ions-cm²/mg)

Fluence
(× 106 # of ions)

Uniformity

#Events
(UL = +20mV;
LL = –20mV)

Cross Section
(× 10–6 cm2)(3)

24

4

5

Ag(109)

56.1

10.30

1.99

95

98

49.2

25

4

5

Ag(109)

56.1

9.97

2.00

95

112

56.0

26

4

5.5

Ag(109)

56.1

9.87

2.01

94

104

51.7

27

4

5.5

Kr(84)

35.2

9.79

2.00

95

52

26.0

28

4

5

Kr(84)

35.2

9.88

2.00

94

49

24.5

29

4

5

Kr(84)

35.2

9.85

2.00

94

50

25.0

30

4

5

Cu(63)

24

10.20

2.00

92

30

15.0

31

4

5

Cu(63)

24

9.90

2.00

92

32

16.0

32

4

5.5

Cu(63)

24

9.21

2.00

95

34

17.0

33

4

5

Ar(40)

9.62

11.40

2.00

98

26

13.0

34

4

5

Ar(40)

9.62

11.40

2.00

98

25

12.5

35

4

5.5

Ar(40)

9.62

11.10

2.00

98

29

14.5

36

4

5

Ne(20)

3.01

17.10

2.00

96

10

5.0

37

4

5

Ne(20)

3.01

9.43

2.00

97

12

6.0

38

4

5.5

Ne(20)

3.01

9.22

2.00

96

11

5.5

42

4

5

N(14)

1.42

9.76

2.00

98

0

0.0

43

4

5

N(14)

1.42

9.96

2.00

99

0

0.0

44

4

5.5

N(14)

1.42

9.93

2.00

99

0

0.0
(1) All SET tests performed at input power = –10dBm.
(2) The run order shown here is not necessarily the order used during heavy-ion characterization of the TRF0213-SEP. Run order was changed for easier appreciation of the results.
(3) Only values corresponding to VDD = 5V are used to generate the Weibull-fit in Figure 8-1.
Cross Section and Weibull-Fit for DUT #4Figure 8-1 Cross Section and Weibull-Fit for DUT #4
Equation 1. σ=σSAT×(1-e-LET-OnsetWs)
Table 8-2 Weibull-FIT Parameters for SET, AC Test at Supply Voltage of +5V
ParameterValue
Onset (MeV-cm2/mg)1.42
σSAT (cm2)80 × 10–6
W40
s1
Worst Case Upset in AC Test When Monitoring Differential Output of the TRF0213-SEPFigure 8-2 Worst Case Upset in AC Test When Monitoring Differential Output of the TRF0213-SEP