SLVK228 October   2025 TPS7H1121-SEP

 

  1.   1
  2.   TPS7H1121-SEP Single-Event Effects (SEE)
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects (SEE)
  6. 3 Device and Test Board Information
    1. 3.1 Device and Test Board Information Continued
  7. 4 Irradiation Facility and Setup
  8. 5 LETEFF and Range Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. 8 Single-Event Transients (SET)
  12. 9 Event Rate Calculations
  13. 10Summary
  14.   A References

Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results

During the SEB/SEGR characterization, the device was tested at room temperature of approximately 25°C. The device was tested under both the enabled and disabled mode. For the SEB-Off test, the device was disabled using the EN-pin by forcing 0V (using CH #1 of a Keysight E36311A PS). During the all SEB/SEGR testing, not a single input current event was observed.

The species used for SEL testing were Silver (109Ag at 15 MeV/nucleon and 19.5 MeV/nucleon at TAMU and KSEE, respectively). For both ions an incident angle of 0° was used to achieve an LETEFF = 48MeV·cm2/mg (for more details refer to Table 5-1). The kinetic energy in the vacuum for 109Ag is 1.633 GeV and 2.123 GeV for TAMU and KSEE, respectively. Flux of 8.78 × 104 to 1.60 × 105 ions/cm2/s and a fluence of approximately 107 ions/cm2 per run was used. Run duration to achieve this fluence was approximately 2 minutes. The nine units (same as used in SEL testing) were powered up and exposed to the heavy-ions using the maximum recommended input voltage of 14V. No SEB/SEGR current events were observed during the 18 runs, indicating that the TPS7H1121-SEP is SEB/SEGR-free up to LETEFF = 48 MeV·cm2/mg and across the full electrical specifications. Table 8-4 shows the SEB/SEGR test conditions and results. Figure 7-3, Figure 7-4, and Figure 7-5 show plots of the current vs time for runs #10, #11, and #14.

Table 7-2 Summary of TPS7H1121-SEP SEB/SEGR Test Condition and Results
Run

Number

Unit

Number

FacilityIONLETEFF (MeV·cm2/mg)FLUX (ions/cm2/s)

FLUENCE

(ions/cm2)
Enabled StatusVOUT (V)IOUT (A)

SEB (Number of Events)

10

1

TAMU

109Ag

47.7

1.40 x 105

1.00 x 107

EN

13.3

2

0

11

1.35 x 105

1.00 x 107DIS

0

—

0

12

2

TAMU

109Ag

47.7

1.60 x 105

1.00 x 107

EN

13.3

2

0

13

1.60 x 105

1.00 x 107

DIS

0

—

0

14

3

TAMU

109Ag

47.7

1.15 x 105

1.00 x 107

EN

0.6

0.1

0

15

1.20 x 105

1.00 x 107

DIS

0

—

0

16

4

TAMU109Ag47.71.13 x 1051.00 x 107EN

13.3

2

0

17

9.82 x 1041.00 x 107DIS

0

—

0

18

5

TAMU109Ag47.71.16 x 1051.00 x 107EN0.6

0.1

0

19

1.19 x 1051.00 x 107DIS0—

0

20

6

TAMU109Ag47.71.25 x 1051.00 x 107EN0.6

0.1

0

21

1.18 x 1051.00 x 107DIS0—

0

22

7

TAMU109Ag47.71.12 x 1051.00 x 107EN13.3

2

0

23

1.14 x 1051.00 x 107DIS0—

0

24

8

KSEE

109Ag

48

9.94 x 104

1.00 x 107

EN

0.6

0.1

0

25

8.78 x 104

1.00 x 107

DIS

0

—

0

26

9

KSEE

109Ag

48

1.07 x 1051.00 x 107

EN

13.3

2

0

27

9.50 x 1041.00 x 107DIS0

—

0

Using the MFTF method described in Single-Event Effects (SEE) Confidence Interval Calculations application report, the upper-bound cross-section (using a 95% confidence level) is calculated as:

σSEB ≤ 2.05 x 10-8 cm2/device for LETEFF = 48 MeV·cm2/mg and T = 25°C.

 SEB On Current Versus Time for Run #10 of the TPS7H1121-SEP at T = 25°C (VOUT = 13.3V)Figure 7-3 SEB On Current Versus Time for Run #10 of the TPS7H1121-SEP at T = 25°C (VOUT = 13.3V)
 SEB Off Current Versus Time for Run #11 of the TPS7H1121-SEP at T = 25°C (VOUT = 0V)Figure 7-4 SEB Off Current Versus Time for Run #11 of the TPS7H1121-SEP at T = 25°C (VOUT = 0V)
 SEB On Current vs Time for Run #14 of the TPS7H1121-SEP at T = 25°C (VOUT = 0.6V)Figure 7-5 SEB On Current vs Time for Run #14 of the TPS7H1121-SEP at T = 25°C (VOUT = 0.6V)