SLVK228 October   2025 TPS7H1121-SEP

 

  1.   1
  2.   TPS7H1121-SEP Single-Event Effects (SEE)
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects (SEE)
  6. 3 Device and Test Board Information
    1. 3.1 Device and Test Board Information Continued
  7. 4 Irradiation Facility and Setup
  8. 5 LETEFF and Range Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. 8 Single-Event Transients (SET)
  12. 9 Event Rate Calculations
  13. 10Summary
  14.   A References

5 LETEFF and Range Calculation

Generalized Cross-Section of the LBC7 Technology BEOL Stack on the TPS7H1121-SEP [Left] and Key Ion Parameters [Right]Figure 5-1 Generalized Cross-Section of the LBC7 Technology BEOL Stack on the TPS7H1121-SEP [Left] and Key Ion Parameters [Right]

The TPS7H1121-SEP is fabricated in the TI Linear BiCMOS 250-nm process with a back-end-of-line (BEOL) stack consisting of 4 levels of standard thickness aluminum. The total stack height from the surface of the passivation to the silicon surface is 10.885-μm based on nominal layer thickness as shown in Figure 5-1.

Accounting for energy loss through the degrader, copper foil, beam port window, air gap, and the BEOL stack of the TPS7H1121-SEP, the effective LET (LETEFF) at the surface of the silicon substrate and the range was determined with:

  • SEUSS 2024 software (provided by TAMU and based on the latest SRIM-2013 [7] models)
  • MSU Stack-Up Calculator (provided by MSU FRIB and based on the latest SRIM-2013 [7] models)

The results are shown in Table 5-1.

Table 5-1 Ion LETEFF and Range in Silicon

Facility

Beam Energy (MeV/nucleon)

Ion Type

Degrader Steps (#)

Degrader Angle (°)

Copper Foil Width (μm)

Beam Port Window

Air Gap (mm)

 Angle

of Incidence

 LETEFF (MeV·cm2/mg)

Range in Silicon (μm)

TAMU

15

109Ag

0

0

-

1-mil Aramica

40

0

47.7

94.2

KSEE

19.5

109Ag

-

-

5

3-mil PEN

50

0

48

92.58