SLVK228 October   2025 TPS7H1121-SEP

 

  1.   1
  2.   TPS7H1121-SEP Single-Event Effects (SEE)
  3.   Trademarks
  4. Introduction
  5. Single-Event Effects (SEE)
  6. Device and Test Board Information
    1. 3.1 Device and Test Board Information Continued
  7. Irradiation Facility and Setup
  8. LETEFF and Range Calculation
  9. Test Setup and Procedures
  10. Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. Single-Event Transients (SET)
  12. Event Rate Calculations
  13. 10Summary
  14.   A References

Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results

During the SEB/SEGR characterization, the device was tested at room temperature of approximately 25°C. The device was tested under both the enabled and disabled mode. For the SEB-Off test, the device was disabled using the EN-pin by forcing 0V (using CH #1 of a Keysight E36311A PS). During the all SEB/SEGR testing, not a single input current event was observed.

The species used for SEL testing were Silver (109Ag at 15 MeV/nucleon and 19.5 MeV/nucleon at TAMU and KSEE, respectively). For both ions an incident angle of 0° was used to achieve an LETEFF = 48MeV·cm2/mg (for more details refer to Table 5-1). The kinetic energy in the vacuum for 109Ag is 1.633 GeV and 2.123 GeV for TAMU and KSEE, respectively. Flux of 8.78 × 104 to 1.60 × 105 ions/cm2/s and a fluence of approximately 107 ions/cm2 per run was used. Run duration to achieve this fluence was approximately 2 minutes. The nine units (same as used in SEL testing) were powered up and exposed to the heavy-ions using the maximum recommended input voltage of 14V. No SEB/SEGR current events were observed during the 18 runs, indicating that the TPS7H1121-SEP is SEB/SEGR-free up to LETEFF = 48 MeV·cm2/mg and across the full electrical specifications. Table 8-4 shows the SEB/SEGR test conditions and results. Figure 7-3, Figure 7-4, and Figure 7-5 show plots of the current vs time for runs #10, #11, and #14.

Table 7-2 Summary of TPS7H1121-SEP SEB/SEGR Test Condition and Results
Run

Number

Unit

Number

FacilityIONLETEFF (MeV·cm2/mg)FLUX (ions/cm2/s)

FLUENCE

(ions/cm2)
Enabled StatusVOUT (V)IOUT (A)

SEB (Number of Events)

10

1

TAMU

109Ag

47.7

1.40 x 105

1.00 x 107

EN

13.3

2

0

11

1.35 x 105

1.00 x 107DIS

0

0

12

2

TAMU

109Ag

47.7

1.60 x 105

1.00 x 107

EN

13.3

2

0

13

1.60 x 105

1.00 x 107

DIS

0

0

14

3

TAMU

109Ag

47.7

1.15 x 105

1.00 x 107

EN

0.6

0.1

0

15

1.20 x 105

1.00 x 107

DIS

0

0

16

4

TAMU109Ag47.71.13 x 1051.00 x 107EN

13.3

2

0

17

9.82 x 1041.00 x 107DIS

0

0

18

5

TAMU109Ag47.71.16 x 1051.00 x 107EN0.6

0.1

0

19

1.19 x 1051.00 x 107DIS0

0

20

6

TAMU109Ag47.71.25 x 1051.00 x 107EN0.6

0.1

0

21

1.18 x 1051.00 x 107DIS0

0

22

7

TAMU109Ag47.71.12 x 1051.00 x 107EN13.3

2

0

23

1.14 x 1051.00 x 107DIS0

0

24

8

KSEE

109Ag

48

9.94 x 104

1.00 x 107

EN

0.6

0.1

0

25

8.78 x 104

1.00 x 107

DIS

0

0

26

9

KSEE

109Ag

48

1.07 x 1051.00 x 107

EN

13.3

2

0

27

9.50 x 1041.00 x 107DIS0

0

Using the MFTF method described in Single-Event Effects (SEE) Confidence Interval Calculations application report, the upper-bound cross-section (using a 95% confidence level) is calculated as:

σSEB ≤ 2.05 x 10-8 cm2/device for LETEFF = 48 MeV·cm2/mg and T = 25°C.

 SEB On Current Versus Time for Run #10 of the TPS7H1121-SEP at T = 25°C (VOUT = 13.3V)Figure 7-3 SEB On Current Versus Time for Run #10 of the TPS7H1121-SEP at T = 25°C (VOUT = 13.3V)
 SEB Off Current Versus Time for Run #11 of the TPS7H1121-SEP at T = 25°C (VOUT = 0V)Figure 7-4 SEB Off Current Versus Time for Run #11 of the TPS7H1121-SEP at T = 25°C (VOUT = 0V)
 SEB On Current vs Time for Run #14 of the TPS7H1121-SEP at T = 25°C (VOUT = 0.6V)Figure 7-5 SEB On Current vs Time for Run #14 of the TPS7H1121-SEP at T = 25°C (VOUT = 0.6V)