SLVK227 October   2025 TPS7H4012-SP , TPS7H4013-SP

 

  1.   1
  2.   TPS7H4012-SP and TPS7H4013-SP Single-Event Effects (SEE)
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects (SEE)
  6. 3 Device and Test Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 Depth, Range, and LETEFF Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. 8 Single-Event Transients (SET)
  12. 9 Event Rate Calculations
  13. 10Summary
  14.   A References

7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results

During the SEB/SEGR characterization, the device was tested at room temperature of ≈25°C. The device was tested under both the enabled and disabled mode. For the SEB-OFF mode the device was disabled using the EN-pin by forcing 0V (using Channel 1 of a E36311A Keysight PS). During the SEB/SEGR testing with the device enabled/disabled, not a single input current event was observed.

The species used for the SEB testing was Homium (165Ho @ 15MeV/nucleon). For the 165Ho ion an angle of incedence of 0° was used to achieve an LETEFF = 75 MeV×cm2/mg (for more details refer to Table 5-1). The kinetic energy in the vacuum for this ion is 2.474 GeV (15-MeV/amu line). Flux of ≈1 × 105 ions/cm2/s and a fluence of ≈107 ions/cm2 was used for the run. Run duration to achieve this fluence was ≈2 minutes. The eight devices (same as used in SEL testing) were powered up and exposed to the heavy-ions using the maximum recommended input voltage of 14V with the max recommended load of each respective device. No SEB/SEGR current events were observed during the eight runs, indicating that the TPS7H401x-SP is SEB/SEGR-free up to LETEFF = 75 MeV×cm2/mg and across the full electrical specifications. Note that due to the electrical performance of the TPS7H4011-SP (14V, 12A buck) an experiment was conducted with the TPS7H4012-SP and the TPS7H4013-SP to determine if a Schottky diode from SW to GND was required for operation during SEE testing. As shown in the table below it was found that both the TPS7H4012-SP and TPS7H4013-SP pass the full SEB run conditions regardless of whether or not the Schottky is present, indicating the Schottky is not required for SEE performance. Table 8-4 shows the SEB/SEGR test conditions and results.

Table 7-2 Summary of TPS7H401x-SP SEB/SEGR Test Condition and Results
Run NumberUnit Number

SW to GND Schottky?

IONLETEFF (MeV × cm2/mg)FLUX (ions/cm2/s)FLUENCE (ions/cm2)Enabled StatusVINIOUT (A)SEB EVENT?

TPS7H4012-SP

9

1

Yes

165Ho751.04 x 1059.99 x 106EN14

6

No
10Yes165Ho759.19 × 1049.99 × 106DIS14

6

No
112Yes165Ho759.98 × 1041.00 × 107EN14

6

No

12

Yes165Ho759.74 × 1041.00 × 107DIS14

6

No
133

No

165Ho758.44 × 1041.00 × 107EN14

6

No
14No165Ho751.24 × 1051.00 × 107DIS14

6

No
154No165Ho751.02 × 1051.00 × 107EN14

6

No
16No165Ho759.82 x 1041.00 x 107DIS14

6

No

TPS7H4013-SP

17

5

Yes165Ho751.07 × 1051.00 x 107EN14

3

No

18

Yes165Ho751.13 × 1051.00 x 107DIS14

3

No

19

6

Yes165Ho751.06 × 1051.00 x 107EN14

3

No

20

Yes165Ho751.17 × 1051.00 x 107DIS14

3

No

21

7

No165Ho751.27 × 1051.00 x 107EN14

3

No

22

No165Ho751.31 × 1051.00 x 107DIS14

3

No

23

8

No165Ho751.25 × 1051.00 x 107EN14

3

No

24

No

165Ho

751.33 × 1051.00 x 107DIS14

3

No

Using the MFTF method described in Single-Event Effects (SEE) Confidence Interval Calculations application report, the upper-bound cross-section (using a 95% confidence level) is calculated as:

σSEB ≤ 2.31 × 10-8 cm2/ device for LETEFF = 75 MeV×cm2/mg and T = 25°C.

SEB On Current vs Time for Run 9 of the TPS7H4012-SP at T = 25°C (VOUT = 3.3V)Figure 7-2 SEB On Current vs Time for Run 9 of the TPS7H4012-SP at T = 25°C (VOUT = 3.3V)
SEB Off Current vs Time for Run 10 of the TPS7H4012-SP at T = 25°C (VOUT = 0V)Figure 7-3 SEB Off Current vs Time for Run 10 of the TPS7H4012-SP at T = 25°C (VOUT = 0V)