SLOK022 December   2024 TLV4H290-SEP

 

  1.   1
  2. 1TLV4H290-SEP Radiation Tolerant High-Speed Comparator TID Report
  3. 2Trademarks
  4. 3Device Information
    1. 3.1 Device Details
  5. 4Total Dose Test Setup
    1. 4.1 Test Overview
    2. 4.2 Test Description and Facilities
    3. 4.3 Test Setup Details
      1. 4.3.1 Unbiased
      2. 4.3.2 Biased
    4. 4.4 Test Configuration and Condition
  6. 5Tested Parameters
  7. 6Total Ionizing Dose RHA Characterization Summary Results
    1. 6.1 HDR Characterization Results
      1. 6.1.1 Input Bias Current
      2. 6.1.2 Output High Leakage
    2. 6.2 Summary of Results
  8.   A Appendix A: Total Ionizing Dose HDR Report
  9.   B Appendix B: Total Ionizing Dose HDR Report - Post-Anneal

4.1 Test Overview

The TLV4H290-SEP was tested according to MIL-STD-883, Test Method 1019.9, Condition A. The product was irradiated up to 30krad(Si) and then put through full electrical parametric testing on the production Automated Test Equipment (ATE).

The TLV4H290-SEP LBC9 process technology contains Bipolar and CMOS components. HDR testing was performed on TLV4H290-SEP. LDR testing was omitted based on MIL-STD-883, Test Method 1019 section 3.13 a3 for LBC9 process technology.

After electrical test, functional units exhibiting parametric drift were placed in extended room temperature anneal testing according to MIL-STD-883, Test Method 1019.9, section 3.11.2. Electrical measurements were taken after the 72 hours annealing procedure. Calculated effective dose rates for each dosage level can be seen in Table 4-1 below. See Appendix 2 for electrical measurement data during room temperature anneal testing.