SLOK022 December   2024 TLV4H290-SEP

 

  1.   1
  2. 1TLV4H290-SEP Radiation Tolerant High-Speed Comparator TID Report
  3. 2Trademarks
  4. 3Device Information
    1. 3.1 Device Details
  5. 4Total Dose Test Setup
    1. 4.1 Test Overview
    2. 4.2 Test Description and Facilities
    3. 4.3 Test Setup Details
      1. 4.3.1 Unbiased
      2. 4.3.2 Biased
    4. 4.4 Test Configuration and Condition
  6. 5Tested Parameters
  7. 6Total Ionizing Dose RHA Characterization Summary Results
    1. 6.1 HDR Characterization Results
      1. 6.1.1 Input Bias Current
      2. 6.1.2 Output High Leakage
    2. 6.2 Summary of Results
  8.   A Appendix A: Total Ionizing Dose HDR Report
  9.   B Appendix B: Total Ionizing Dose HDR Report - Post-Anneal

4.4 Test Configuration and Condition

A step-stress (20k and 30k) test method was used to determine the TID hardness level.

That is, after a predetermined TID level was reached, an electrical test was performed on a given sample of parts to verify that the units are within specified data sheet electrical test limits. MIL-STD-883, Test Method 1019.9, Condition A was used in this case. If this passes, then the wafer lot can be certified as an RHA wafer lot.

Table 4-2 list the serialized samples that was used during the RHA characterization.

Table 4-2 HDR 256rad(Si)/s Biased and Unbiased Device Information
HDR = 265rad(Si)/s
Total Samples: 10/dose level (6 biased + 6 unbiased)
Exposure Levels
20krad(Si)30krad(Si)
BiasedBiased

03, 004, 005, 006, 007, 008


(Wafer 1)		015, 016, 017, 018, 019, 020
(Wafer 1)
UnbiasedUnbiased
09, 010, 011, 012, 013, 014
(Wafer 1)		021, 022, 023, 024, 025, 026
(Wafer 1)