SLOK019 December   2024 TLV4H290-SEP

 

  1.   1
  2.   2
  3.   Trademarks
  4. 1Overview
  5. 2SEE Mechanisms
  6. 3Test Device and Test Board Information
  7. 4Irradiation Facility and Setup
  8. 5Results
    1. 5.1 Single Event Latchup (SEL) Results
    2. 5.2 Single Event Transient (SET) Results
  9. 6Summary
  10.   A SET Results Appendix
  11.   B References

2 SEE Mechanisms

The primary single-event effect (SEE) events of interest in the TLV4Hx90-SEP are single-event latch-up (SEL). From a risk/impact point-of-view, the occurrence of an SEL is potentially the most destructive SEE event and the biggest concern for space applications. The LBC9 BiCMOS process was used for the TLV4H290-SEP. CMOS circuitry introduces a potential for SEL susceptibility. SEL can occur if excess current injection caused by the passage of an energetic ion is high enough to trigger the formation of a parasitic cross-coupled PNP and NPN bipolar structure (formed between the p-sub and n-well and n+ and p+ contacts). The parasitic bipolar structure initiated by a single-event creates a high-conductance path (inducing a steady-state current that is typically orders-of-magnitude higher than the normal operating current) between power and ground that persists (is “latched”) until power is removed or until the device is destroyed by the high-current state. The process modifications applied for SEL-mitigation were sufficient as the TLV4H290-SEP exhibited no SEL with heavy-ions up to an LETEFF of 50.5MeV-cm2/mg at a fluence of 107 ions/cm2 and a chip temperature of 125°C.

This study was performed to evaluate the SEL effects with a bias voltage of 5.5V on V+ Supply Voltage. Heavy ions with LETEFF = 50.5MeV-cm2/mg were used to irradiate the devices. Flux of 105 ions/s-cm2 and fluence of 107 ions/cm2 were used during the exposure at 125°C temperature.