SLOK019 December   2024 TLV4H290-SEP

 

  1.   1
  2.   2
  3.   Trademarks
  4. 1Overview
  5. 2SEE Mechanisms
  6. 3Test Device and Test Board Information
  7. 4Irradiation Facility and Setup
  8. 5Results
    1. 5.1 Single Event Latchup (SEL) Results
    2. 5.2 Single Event Transient (SET) Results
  9. 6Summary
  10.   A SET Results Appendix
  11.   B References

3 Test Device and Test Board Information

The TLV4H290-SEP are packaged in a 14-pin, SOT-23 shown with pinout in Figure 3-1.

TLV4H290-SEP TLV4H290-SEP Pinout DiagramFigure 3-1 TLV4H290-SEP Pinout Diagram

Qualification Devices and Test Board

The TLV4H290-SEP was biased in either an output high or output low condition in single supply, where V+ was set to +5.5V and V- was set to GND (0V). The outputs are tied to +5.5V through 20kΩ pull-up resistors.

To achieve an output high state, IN+ was biased with +1V and IN- was biased with +0.5V. For an output low condition, IN+ was biased with +0.5V and IN- was biased with +1V.

Heavy ions with LETEFF =50.5MeV-cm2 / mg were used to irradiate the devices. A nominal flux of 105 ions / s-cm2 and fluence of 107 ions / cm2 were used during the exposure at 125°C.

TLV4H290-SEP TLV4H290-SEP Bias Diagram - Output Low Figure 3-2 TLV4H290-SEP Bias Diagram - Output Low
TLV4H290-SEP TLV4H290-SEP Bias Diagram - Output High Figure 3-3 TLV4H290-SEP Bias Diagram - Output High
TLV4H290-SEP TLV4H290-SEP Bias Board for SEL Testing Figure 3-4 TLV4H290-SEP Bias Board for SEL Testing