SBOK097B April   2025  – June 2025 TMP9R01-SEP

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1 Introduction
  5. 2 Sample Identification
  6. 3 Irradiation Facility and Setup
  7. 4 Die Micro-section
  8. 5 Test Set-Up
  9. 6 SEL Results
    1. 6.1 TMP9R01-SEP SEL Data
  10. 7 SET Results
    1. 7.1 Summary of SET Results
      1. 7.1.1 Local Temperature Reads
        1. 7.1.1.1 Analog Alert Captures
    2. 7.2 Cross Section Events and Event Rate Calculations
  11. 8 Detailed Results Per Run
    1. 8.1 Detailed Run Raw Data
  12. 9 Summary
  13. 10Glossary
  14. 11Revision History

6 SEL Results

SEL detection is performed by monitoring the DUT supply current. An SEL event occurs when a device latches and the device current exceeds 600uA. During a latch up event, communication is interfered. A total of three devices were tested and verified at max temperature, max voltage, and at 50.5MeV radiation exposure. Depending on the state the device is in, the output quiescent current can change. The beam start time and end time was taken at different states of the device. The device was heated using forced hot air, maintaining the die temperature at 125°C. All devices where tested before and after SEL exposure to verify the performance of the device. Table 6-1 below shows the details of each device passing with functional behavior after exposing.