SBOK093 December   2024 OPA4H199-SP

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Device Information
    1. 1.1 Product Description
    2. 1.2 Device Details
  5. 2Total Dose Test Setup
    1. 2.1 Test Overview
    2. 2.2 Test Description and Facilities
    3. 2.3 Test Setup Details
      1. 2.3.1 Unbiased
      2. 2.3.2 Biased
    4. 2.4 Test Configuration and Condition
  6. 3TID Characterization Test Results
    1. 3.1 TID Characterization Summary Results
    2. 3.2 Electrical Characteristics
  7. 4Applicable and Reference Documents
    1. 4.1 Applicable Documents
    2. 4.2 Reference Documents
  8.   A Appendix A: Enhanced Low Dose Rate Sensitivity (ELDRS) Characterization Report
  9.   B Appendix B: HDR Results Report at 100krad(Si)
  10.   C Appendix C: LDR Results Report at 100krad(Si)
  11.   D Appendix D: HDR Results Report at 100krad(Si) with Absolute Maximum Rating Supply Voltage

2.2 Test Description and Facilities

The OPA4H199-SP LDR exposure was performed on biased and unbiased devices in a 60Co gamma cell under a 10mrad(Si)/s exposure rate. The dose rate of the irradiator used in the exposure ranges from < 10mrad(Si)/s to a maximum of approximately 65rad(Si)/s, determined by the distance from the source. For the LDR (10 mrad(Si)/s) exposure, the test box was positioned approximately 2m from the source. The exposure boards are housed in a lead-aluminum box (as specified in MIL-STD-883 TM 1019.9) to harden the gamma spectrum and minimize dose enhancement effects. The irradiator calibration is maintained by Longmire Laboratories using thermoluminescence dosimeters (TLDs) traceable to the National Institute of Standards and Technology (NIST) and the dosimetry was verified using TLDs prior to the radiation exposures. After exposure, the devices were packed in dry ice (per MIL-STD-883 Method 1019.9 section 3.10) and returned to TI Dallas for a full post-radiation electrical evaluation using Texas Instruments production ATE. The ATE test limits are set within SMD electrical limits and are guardbanded to ensure a minimum Cpk and test error margin based on initial qualification and characterization data. Post radiation measurements were taken within 30 minutes of removal of the devices from the dry ice container. The devices were allowed to reach room temperature prior to electrical post-radiation measurements.

The OPA4H199-SP HDR exposure was performed on biased and unbiased devices in a Co-60 gamma cell at TI facility in Dallas, Texas. The unattenuated dose rate of this cell was 300rads(Si)/s. The 100krad(Si) biased and unbiased devices were annealed with the respective biased and unbiased condition for 168 hours and retested. The effective dose rate for these devices was 165 mrad(Si)/s. ATE test limits are set per data sheet electrical limits based on qualification and characterization data. A second set of OPA4H199-SP units received HDR exposure when powered by a single-supply 40V power supply (V+ = 40V and V- = GND) and common-mode input voltage (VCM) was set equal to V+ (VCM = V+ = 40V). The results of this additional HDR run are also included below.