SBOK090A January   2025  – April 2025 THVD9491-SEP

PRODUCTION DATA  

  1.   1
  2.   THVD9491-SEP Single-Event Effects (SEE) Radiation Report
  3.   Trademarks
  4. 1Overview
  5. 2Single-Event Effects (SEE) Mechanisms
  6. 3Test Device and Test Board Information
  7. 4Irradiation Facility and Setup
  8. 5Results
    1. 5.1 SEL Results
    2. 5.2 Event Rate Calculations
    3. 5.3 SET Results
  9. 6Summary
  10. 7References
  11. 8Revision History

6 Summary

The purpose of this study was to characterize the effects of heavy-ion irradiation on the single-event latch-up (SEL) performance and single-event transients (SET) performance of the THVD9491-SEP, a radiation-tolerant 1.2V to 5.5V octal bus transceivers with tri-state outputs. Heavy-ions with an LETEFF of 47.5MeV × cm2/mg were used for the SEE characterization. The SEE results demonstrated that the THVD9491-SEP is SEL-free up to LETEFF = 47.5MeV × cm2/ mg and across the full electrical specifications. Transients at LETEFF = 47.5MeV × cm2/ mg on VOUT are presented and discussed. CREME96-based worst-week event-rate calculations for LEO (ISS) and GEO orbits for the DSEE are presented for reference.