SBOK090A January   2025  – April 2025 THVD9491-SEP

PRODUCTION DATA  

  1.   1
  2.   THVD9491-SEP Single-Event Effects (SEE) Radiation Report
  3.   Trademarks
  4. 1Overview
  5. 2Single-Event Effects (SEE) Mechanisms
  6. 3Test Device and Test Board Information
  7. 4Irradiation Facility and Setup
  8. 5Results
    1. 5.1 SEL Results
    2. 5.2 Event Rate Calculations
    3. 5.3 SET Results
  9. 6Summary
  10. 7References
  11. 8Revision History

SEL Results

During SEL characterization, the device was heated using forced hot air, maintaining device temperature at 125°C ± 5°C. A FLIR (FLIR ONE Pro LT) thermal camera was used to validate die temperature to make sure the device was being accurately heated. The species used for SEL testing was a Silver (109Ag) ion at an energy of 15MeV/µ with an angle-of-incidence of 0° for an LETEFF of 47.5MeV-cm2/mg. A fluence of approximately 1 × 107ions / cm2 were used for the runs.

The three devices were powered up and exposed to the heavy-ions using the maximum recommended supply voltage of 5.5V with a National Instruments PXI Chassis PXIe-4139 and a second National Instruments PXI Chassis PXIe-4139 used for the different voltage levels on the A input pin. The run duration to achieve this fluence was approximately one and a half minutes. As listed in Table 5-3, no SEL events were observed during the six runs, which indicates that the THVD9491-SEP is SEL-free. Figure 5-1, Figure 5-2 show the plot of current versus time for runs one and four, respectively. The R output pin was also monitored during SEL.

Table 5-1 Summary of THVD9491-SEP Test Conditions and Results
Run NumberUnit NumberBiasDistance (mm)Temperature
(°C)
IonAngleFLUX
(ions × cm2 / mg)
Fluence
(Number of ions)
LETEFF
(MeV × cm2 / mg)
Did an SEL event occur?
11140124.1Ag1.00E + 051.00E + 0747.5No
21240124.1Ag1.00E + 051.00E + 0747.5No
32140123.7Ag1.00E + 051.00E + 0747.5No
42240123.7Ag1.00E + 051.00E + 0747.5No
53140123Ag1.00E + 051.00E + 0747.5No
63240123Ag1.00E + 051.00E + 0747.5No
THVD9491-SEP Current versus Time for Run Number 1 of the THVD9491-SEP at T = 125°CFigure 5-1 Current versus Time for Run Number 1 of the THVD9491-SEP at T = 125°C
THVD9491-SEP Current versus Time for Run Number 4 of the THVD9491-SEP at T = 125°CFigure 5-2 Current versus Time for Run Number 4 of the THVD9491-SEP at T = 125°C

No SEL events were observed, which indicates that the THVD9491-SEP is SEL-immune at LETEFF = 47.5MeV-cm2 / mg and T = 125°C. Using the MFTF method described in Section 5.2, the upper-bound cross-section (using a 95% confidence level) is calculated as:

Equation 1. σSEL ≤ 1.23 × 10–7 cm2/ device for LETEFF = 47.5MeV-cm2 / mg and T = 125°C.