SBOK090A January   2025  – April 2025 THVD9491-SEP

PRODUCTION DATA  

  1.   1
  2.   THVD9491-SEP Single-Event Effects (SEE) Radiation Report
  3.   Trademarks
  4. 1Overview
  5. 2Single-Event Effects (SEE) Mechanisms
  6. 3Test Device and Test Board Information
  7. 4Irradiation Facility and Setup
  8. 5Results
    1. 5.1 SEL Results
    2. 5.2 Event Rate Calculations
    3. 5.3 SET Results
  9. 6Summary
  10. 7References
  11. 8Revision History

5.3 SET Results

SETs are defined as heavy-ion-induced transients upsets on VOUT of the THVD9491-SEP. The species used for the SET testing was a Silver (Ag), a Krypton (Kr) and an Argon (Ar) with an angle-of-incidence of 0° for an LETEFF of 47.5, 30.1 and 8.54MeV-cm2/mg respectively. Flux of approximately 104ions/cm2 × s and a fluence of approximately 106ions/cm2 were used for all runs of SET testing. VOUT SETs were characterized using a window trigger of ±10% around the nominal output voltage. The devices were characterized in two different voltage cases. The first used a 3.3V VCC, 1.8V VIO and 6V A pin voltage. The second used a 5.5V VCC, 5.5V VIO and 12V A pin voltage. Both bias schemes used a NI PXIe-5172 to monitor the R pin as output. The scope triggering from VOUT was programmed to record 150 samples for both schemes with a constant sample rate of 100 mega-samples per second (MS/s) in case of an event. The scope was programmed to record 20% of the data before the trigger. Under heavy-ions, the THVD9491-SEP exhibits transient upsets that were fully recoverable without the need for external intervention. Test conditions and results are shown below in Table 5-3.
Table 5-3 Summary of THVD9491-SEP Test Conditions and Results
Run Number Unit Number Ion LETEFF (MeV × cm2 / mg) FLUX (ions /cm2 × sec) Fluence (ions / cm2)

Bias #

 Trigger

Value (%)

VOUTSET (#) ≥10% [R Pin]
1 1 Ag 47.5 1.00E + 04 1.00E + 06 1 15 75
2 1 Ag 47.5 1.00E + 04 1.00E + 06 1 10 110
3 1 Ag 47.5 1.00E + 04 1.00E + 06 2 10 10
4 1 Ag 47.5 1.00E + 04 1.00E + 06 2 5 9
5 2 Kr 30.1 1.00E + 04 1.00E + 06 1 10 32
6 2 Kr 30.1 1.00E + 04 1.00E + 06 2 10 11
7 2 Kr 30.1 1.00E + 04 1.00E + 06 2 5 10
8 3 Ar 8.54 1.00E + 04 1.00E + 06 1 10 28
9 3 Ar 8.54 1.00E + 04 1.00E + 06 2 10 5
10 3 Ar 8.54 1.00E + 04 1.00E + 06 2 5 1
THVD9491-SEP Worst Case Transient Plot (Run 2 - R Pin) Figure 5-3 Worst Case Transient Plot (Run 2 - R Pin)
THVD9491-SEP Worst Case Transient Plot (Run 4 - R Pin) Figure 5-4 Worst Case Transient Plot (Run 4 - R Pin)

Using the MFTF method, the upper-bound cross section (using a 95% confidence level) is calculated for the different SETs as shown below.

Table 5-4 Upper Bound Cross Section at 95% Confidence Interval
SET Type Ion Bias Scheme Upsets (Number) Upper Bound Cross Section (cm2/device)
VOUTSET ≥ 10% Ag 1 110 1.326E - 04
VOUTSET ≥ 10% Ag 2 10 1.839E - 05
VOUTSET ≥ 10% Kr 1 32 4.517E - 05
VOUTSET ≥ 10% Kr 2 11 1.968E - 05
VOUTSET ≥ 10% Ar 1 28 4.047E - 05
VOUTSET ≥ 10% Ar 2 5 1.167E - 05