SLUS168F April   1999  – July 2025 UCC2808-1 , UCC2808-2 , UCC3808-1 , UCC3808-2

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Pin Descriptions
    4. 6.4 Device Functional Modes
      1. 6.4.1 VCC
  8. Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
      3. 7.2.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 Related Links
    3. 8.3 Receiving Notification of Documentation Updates
    4. 8.4 Support Resources
    5. 8.5 Trademarks
    6. 8.6 Electrostatic Discharge Caution
    7. 8.7 Glossary
  10. Revision History
  11. 10Mechanical, Packaging, and Orderable Information

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Layout Guidelines

  • Place the VDD capacitor as close as possible between the VDD terminal and GND of the UCCx808-x, tracked directly to both terminals.
  • A small, external filter capacitor is recommended on the CS terminal. Track the filter capacitor as directly as possible from the CS to GND terminal.
  • The tracking and layout of the FB terminal and connecting components is critical to minimize noise pick-up and interference in the magnetic sensing block. Minimize the total surface area of trances on the FB net.
  • The OUTA/OUTB terminal has high internal sink or source current capability. An external gate resistor is recommended. The value depends on the choice of power MOSFET, efficiency and EMI considerations. A pulldown resistor on the gate of the external MOSFET is recommended to prevent the MOSFET gate from floating on if there is an open-circuit error in the gate drive path.