ZHCSSY1 august   2023 UCC23113

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 Pin Configuration and Function
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Power Ratings
    6. 6.6 Insulation Specifications
    7. 6.7 Electrical Characteristics
    8. 6.8 Switching Characteristics
    9. 6.9 Typical Characteristics
  8. 7 Parameter Measurement Information
    1. 7.1 Propagation Delay, Rise Time and Fall Time
    2. 7.2 IOH and IOL testing
    3. 7.3 CMTI Testing
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Power Supply
      2. 8.3.2 Input Stage
      3. 8.3.3 Output Stage
      4. 8.3.4 Protection Features
        1. 8.3.4.1 Undervoltage Lockout (UVLO)
        2. 8.3.4.2 Active Pulldown
        3. 8.3.4.3 Short-Circuit Clamping
    4. 8.4 Device Functional Modes
      1. 8.4.1 ESD Structure
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Selecting the Input Resistor
        2. 9.2.2.2 Gate Driver Output Resistor
        3. 9.2.2.3 Estimate Gate-Driver Power Loss
        4. 9.2.2.4 Estimating Junction Temperature
        5. 9.2.2.5 Selecting VDD Capacitor
  11. 10Power Supply Recommendations
  12. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 PCB Material
  13. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 第三方产品免责声明
      2. 12.1.2 Development Support
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 接收文档更新通知
    4. 12.4 支持资源
    5. 12.5 Trademarks
    6. 12.6 静电放电警告
    7. 12.7 术语表
  14. 13Mechanical, Packaging, and Orderable Information

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订购信息

10 Power Supply Recommendations

The recommended input supply voltage (VDD) for the UCC23113 device is from 13 V to 30 V. The lower limit of the range of output bias-supply voltage (VDD) is determined by the internal UVLO protection feature of the device. VDD voltage should not fall below the UVLO threshold for normal operation, or else the gate-driver outputs can become clamped low for more than 20 μs by the UVLO protection feature. The higher limit of the VDD range depends on the maximum gate voltage of the power device that is driven by the UCC23113 device, and should not exceed the recommended maximum VDD of 30 V. A local bypass capacitor should be placed between the VDD and VEE pins, with a value of 220 nF to 10 μF for device biasing. TI recommends placing an additional 100-nF capacitor in parallel with the device biasing capacitor for high frequency filtering. Both capacitors should be positioned as close to the device as possible. Low-ESR, ceramic surface-mount capacitors are recommended.

If only a single, primary-side power supply is available in an application, isolated power can be generated for the secondary side with the help of a transformer driver such as Texas Instruments' SN6501 or SN6505A. For such applications, detailed power supply design and transformer selection recommendations are available in SN6501 Transformer Driver for Isolated Power Supplies data sheet and SN6505A Low-Noise 1-A Transformer Drivers for Isolated Power Supplies data sheet.