ZHCSSY1 august   2023 UCC23113

PRODUCTION DATA  

  1.   1
  2. 特性
  3. 应用
  4. 说明
  5. Revision History
  6. Pin Configuration and Function
  7. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Power Ratings
    6. 6.6 Insulation Specifications
    7. 6.7 Electrical Characteristics
    8. 6.8 Switching Characteristics
    9. 6.9 Typical Characteristics
  8. Parameter Measurement Information
    1. 7.1 Propagation Delay, Rise Time and Fall Time
    2. 7.2 IOH and IOL testing
    3. 7.3 CMTI Testing
  9. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Power Supply
      2. 8.3.2 Input Stage
      3. 8.3.3 Output Stage
      4. 8.3.4 Protection Features
        1. 8.3.4.1 Undervoltage Lockout (UVLO)
        2. 8.3.4.2 Active Pulldown
        3. 8.3.4.3 Short-Circuit Clamping
    4. 8.4 Device Functional Modes
      1. 8.4.1 ESD Structure
  10. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Selecting the Input Resistor
        2. 9.2.2.2 Gate Driver Output Resistor
        3. 9.2.2.3 Estimate Gate-Driver Power Loss
        4. 9.2.2.4 Estimating Junction Temperature
        5. 9.2.2.5 Selecting VDD Capacitor
  11. 10Power Supply Recommendations
  12. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 PCB Material
  13. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 第三方产品免责声明
      2. 12.1.2 Development Support
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 接收文档更新通知
    4. 12.4 支持资源
    5. 12.5 Trademarks
    6. 12.6 静电放电警告
    7. 12.7 术语表
  14. 13Mechanical, Packaging, and Orderable Information

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机械数据 (封装 | 引脚)
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订购信息

Undervoltage Lockout (UVLO)

UVLO function is implemented for VDD and VEE pins to prevent an under-driven condition on IGBTs and MOSFETs. When VDD is lower than UVLOR at device start-up or lower than UVLOF after start-up, the voltage-supply UVLO feature holds the effected output low, regardless of the input forward current as shown in Table 8-2. The VDD UVLO protection has a hysteresis feature (UVLOhys). This hysteresis prevents chatter when the power supply produces ground noise which allows the device to permit small drops in bias voltage, which occurs when the device starts switching and operating current consumption increases suddenly.

When VDD drops below UVLOF, a delay, tUVLO_rec occurs on the output when the supply voltage rises above UVLOR again.

GUID-20230822-SS0I-429R-9B2T-SH1ZM7NG06W6-low.svg Figure 8-5 UVLO Functionality