ZHCSSY1 august   2023 UCC23113

PRODUCTION DATA  

  1.   1
  2. 特性
  3. 应用
  4. 说明
  5. Revision History
  6. Pin Configuration and Function
  7. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Power Ratings
    6. 6.6 Insulation Specifications
    7. 6.7 Electrical Characteristics
    8. 6.8 Switching Characteristics
    9. 6.9 Typical Characteristics
  8. Parameter Measurement Information
    1. 7.1 Propagation Delay, Rise Time and Fall Time
    2. 7.2 IOH and IOL testing
    3. 7.3 CMTI Testing
  9. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Power Supply
      2. 8.3.2 Input Stage
      3. 8.3.3 Output Stage
      4. 8.3.4 Protection Features
        1. 8.3.4.1 Undervoltage Lockout (UVLO)
        2. 8.3.4.2 Active Pulldown
        3. 8.3.4.3 Short-Circuit Clamping
    4. 8.4 Device Functional Modes
      1. 8.4.1 ESD Structure
  10. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Selecting the Input Resistor
        2. 9.2.2.2 Gate Driver Output Resistor
        3. 9.2.2.3 Estimate Gate-Driver Power Loss
        4. 9.2.2.4 Estimating Junction Temperature
        5. 9.2.2.5 Selecting VDD Capacitor
  11. 10Power Supply Recommendations
  12. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 PCB Material
  13. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 第三方产品免责声明
      2. 12.1.2 Development Support
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 接收文档更新通知
    4. 12.4 支持资源
    5. 12.5 Trademarks
    6. 12.6 静电放电警告
    7. 12.7 术语表
  14. 13Mechanical, Packaging, and Orderable Information

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Application Information

The UCC23113 is a single channel, isolated gate driver with opto-compatible input for power semiconductor devices, such as MOSFETs, IGBTs, or SiC MOSFETs. It is intended for use in applications such as motor control, industrial inverters, and switched-mode power supplies. It differs from standard opto isolated gate drivers as it does not have an LED input stage. Instead of an LED, it has an emulated diode (e-diode). To turn the e-diode "ON", a forward current in the range of 7 mA to 16 mA should be driven into the Anode. This will drive the gate driver output High and turn on the power FET. Typically, MCUs are not capable of providing the required forward current. Hence a buffer has to be used between the MCU and the input stage of UCC23113. Typical buffer power supplies are either 5 V or 3.3 V. A resistor is needed between the buffer and the input stage of the UCC23113 to limit the current. It is simple, but important to choose the right value of resistance. The resistor tolerance, buffer supply voltage tolerance and output impedance of the buffer, have to be considered in the resistor selection. This will ensure that the e-diode forward current stays within the recommended range of 7 mA to 16 mA. Detailed design recommendations are given in the Section 9.1. The current driven input stage offers excellent noise immunity that is need in high power motor drive systems, especially in cases where the MCU cannot be located close to the isolated gate driver. UCC23113 offers best in class CMTI performance of >100 kV/μs at 1500 V common-mode voltages.

The e-diode is capable of 25 mA continuous in the forward direction. The forward voltage drop of the e-diode has a very tight part to part variation (1.8 V min to 2.4 V max). The temperature coefficient of the forward drop is <1.35 mV/°C. The dynamic impedance of the e-diode in the forward biased region is ~1 Ω. All of these factors contribute in excellent stability of the e-diode forward current. To turn the e-diode "OFF", the Anode - Cathode voltage should be <0.8 V, or IF should be <IFLH. The e-diode can also be reverse biased up to 5 V (6 V abs max) in order to turn it off and bring the gate driver output low. The large reverse breakdown voltage of the input stage provides system designers with the feature to use interlocking circuit and gain protection against shoot-through when driving a half-bridge power stage.

The output power supply for UCC23113 can be as high as 30 V (36 V abs max). The output power supply can be configured externally as a single isolated supply up to 30 V or isolated bipolar supply such that VDD-VEE does not exceed 30 V, or it can be bootstrapped (with external diode and capacitor) if the system uses a single power supply with respect to the power ground. Typical quiescent power supply current from VDD is 1.2 mA (max 2.2 mA).