ZHCSOE5B March   2022  – January 2023 UCC21737-Q1

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Power Ratings
    6. 6.6  Insulation Specifications
    7. 6.7  Safety Limiting Values
    8. 6.8  Electrical Characteristics
    9. 6.9  Switching Characteristics
    10. 6.10 Insulation Characteristics Curves
    11. 6.11 Typical Characteristics
  7. Parameter Measurement Information
    1. 7.1 Propagation Delay
      1. 7.1.1 Regular Turn-OFF
    2. 7.2 Input Deglitch Filter
    3. 7.3 Active Miller Clamp
      1. 7.3.1 External Active Miller Clamp
    4. 7.4 Undervoltage Lockout (UVLO)
      1. 7.4.1 VCC UVLO
      2. 7.4.2 VDD UVLO
      3. 7.4.3 VEE UVLO
    5. 7.5 Overcurrent (OC) Protection
      1. 7.5.1 OC Protection with Soft Turn-OFF
    6. 7.6 ASC Support
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Power Supply
      2. 8.3.2  Driver Stage
      3. 8.3.3  VCC, VDD, and VEE Undervoltage Lockout (UVLO)
      4. 8.3.4  Active Pulldown
      5. 8.3.5  Short Circuit Clamping
      6. 8.3.6  External Active Miller Clamp
      7. 8.3.7  Overcurrent and Short Circuit Protection
      8. 8.3.8  Soft Turn-off
      9. 8.3.9  Fault (FLT), Reset, and Enable (RST/EN)
      10. 8.3.10 ASC Support and APWM Monitor
    4. 8.4 Device Functional Modes
  9. Applications and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Input Filters for IN+, IN-, and RST/EN
        2. 9.2.2.2 PWM Interlock of IN+ and IN-
        3. 9.2.2.3 FLT, RDY, and RST/EN Pin Circuitry
        4. 9.2.2.4 RST/EN Pin Control
        5. 9.2.2.5 Turnon and Turnoff Gate Resistors
        6. 9.2.2.6 External Active Miller Clamp
        7. 9.2.2.7 Overcurrent and Short Circuit Protection
          1. 9.2.2.7.1 Protection Based on Power Modules with Integrated SenseFET
          2. 9.2.2.7.2 Protection Based on Desaturation Circuit
          3. 9.2.2.7.3 Protection Based on Shunt Resistor in Power Loop
        8. 9.2.2.8 Higher Output Current Using an External Current Buffer
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 第三方产品免责声明
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 支持资源
    4. 12.4 Trademarks
    5. 12.5 静电放电警告
    6. 12.6 术语表
  13. 13Mechanical, Packaging, and Orderable Information

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Overview

The UCC21737-Q1 device is an advanced isolated gate driver with state-of-art protection and sensing features for SiC MOSFETs and IGBTs. The device can support up to 2121-V DC operating voltage based on SiC MOSFETs and IGBTs, and can be used to above 10-kW applications such as HEV/EV traction inverter, motor drive, on-board and off-board battery charger, solar inverter, and so forth. The galvanic isolation is implemented by the capacitive isolation technology, which can realize a reliable reinforced isolation between the low voltage DSP/MCU and high voltage side.

The ±10-A peak sink and source current of the UCC21737-Q1 can drive the SiC MOSFET modules and IGBT modules directly without an extra buffer. The driver can also be used to drive higher power modules or parallel modules with external buffer stage. The input side is isolated with the output side with a reinforced isolation barrier based on capacitive isolation technology. The device can support up to 1.5-kVRMS working voltage, 12.8-kVPK surge immunity with longer than 40 years isolation barrier life. The strong drive strength helps to switch the device fast and reduce the switching loss, while the 150V/ns minimum CMTI ensures the reliability of the system with fast switching speed. The small propagation delay and part-to-part skew can minimize the deadtime setting, so the conduction loss can be reduced.

The device includes extensive protection and monitor features to increase the reliability and robustness of the SiC MOSFET and IGBT based systems. The 12-V output side power supply UVLO is suitable for switches with gate voltage ≥ 15 V. The active Miller clamp feature prevents the false turn on caused by Miller capacitance during fast switching. An external Miller clamp FET can be used, providing more versatility to the system design. The device has a state-of-art overcurrent and short circuit detection time, and fault reporting function to the low voltage side DSP/MCU. The soft turn off is triggered when the overcurrent or short circuit fault is detected, minimizing the short circuit energy while reducing the overshoot voltage on the switches.

The active short circuit feature can create a phase-to-phase short circuit for a three-phase inverter, which is useful for motor drive applications to protect the battery if the microcontroller loses control.