SBVS463A October   2025  – December 2025 TPS7E81-Q1

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagrams
    3. 6.3 Feature Description
      1. 6.3.1 Enable (EN)
      2. 6.3.2 Dropout Voltage (VDO)
      3. 6.3.3 Undervoltage Lockout
      4. 6.3.4 Thermal Shutdown
      5. 6.3.5 Foldback Current Limit
      6. 6.3.6 Power Limit
      7. 6.3.7 Output Pulldown
    4. 6.4 Device Functional Modes
      1. 6.4.1 Device Functional Mode Comparison
      2. 6.4.2 Normal Operation
      3. 6.4.3 Dropout Operation
      4. 6.4.4 Disabled
  8. Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Adjustable Device Feedback Resistor Selection
      2. 7.1.2 Recommended Capacitor Types
      3. 7.1.3 Input and Output Capacitor Selection
      4. 7.1.4 Reverse Current
      5. 7.1.5 Feed-Forward Capacitor
      6. 7.1.6 Dropout Voltage
      7. 7.1.7 Estimating Junction Temperature
      8. 7.1.8 Power Dissipation (PD)
      9. 7.1.9 Power Dissipation Versus Ambient Temperature
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Choose Feedback Resistors
      3. 7.2.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Development Support
        1. 8.1.1.1 Evaluation Module
        2. 8.1.1.2 Spice Models
      2. 8.1.2 Device Nomenclature
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
    3. 8.3 Receiving Notification of Documentation Updates
    4. 8.4 Support Resources
    5. 8.5 Trademarks
    6. 8.6 Electrostatic Discharge Caution
    7. 8.7 Glossary
  10. Revision History
  11. 10Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)

Power Dissipation Versus Ambient Temperature

Figure 7-2, Figure 7-3 and Figure 7-4 are based off of a JESD51-7 4-layer, high-K board. The allowable power dissipation is estimated using the following equation. As discussed in the An empirical analysis of the impact of board layout on LDO thermal performance application note, thermal dissipation can be improved in the JEDEC high-K layout by adding top layer copper and increasing the number of thermal vias. If a good thermal layout is used, the allowable thermal dissipation can be improved by up to 50%.

Equation 13. T A +   R θ J A     ×   P D     150  
TPS7E81-Q1 TPS7E81-Q1 (DBV) Allowable
                    Power Dissipation Figure 7-2 TPS7E81-Q1 (DBV) Allowable Power Dissipation
TPS7E81-Q1 TPS7E81-Q1 (DRV) Allowable
                    Power Dissipation Figure 7-3 TPS7E81-Q1 (DRV) Allowable Power Dissipation
TPS7E81-Q1 TPS7E81-Q1 (DGN) Allowable
                    Power Dissipation Figure 7-4 TPS7E81-Q1 (DGN) Allowable Power Dissipation