SBVS463 October 2025 TPS7E81-Q1
ADVANCE INFORMATION
The device contains a thermal shutdown
protection circuit to disable the device when the junction temperature
(TJ) of the pass transistor rises to TSD+
(typical). Thermal shutdown hysteresis verifies that the device resets (turns on) when the
temperature falls to TSD- (typical).
The thermal time-constant of the semiconductor die is fairly short, thus the device can cycle on and off when thermal shutdown is reached until power dissipation is reduced. Power dissipation during startup can be high from large VIN – VOUT voltage drops across the device or from high inrush currents charging large output capacitors. Under some conditions, the thermal shutdown protection disables the device before startup completes.
For reliable operation, limit the junction temperature to the maximum listed in the Section 5.3 tabe. Operation above this maximum temperature causes the device to exceed the operational specifications. Although the internal protection circuitry of the device is designed to protect against thermal overall conditions, this circuitry is not intended to replace proper heat sinking. Continuously running the device into thermal shutdown or above the maximum recommended junction temperature reduces long-term reliability.