11 Register Map

The TPS65175/A has one non-volatile memory which contains the initial value of the DAC and one volatile memory which contains the DAC setting. The non-volatile memory is called the Initial Value Register (IVR) and the volatile memory is called DAC Register (DR). The non-volatile IVR and the volatile DR are accessed with the same address.

Startup option: At power-up, the value contained in the IVR is loaded into the volatile DR and IVR presets the DAC to the last stored setting. The factory programmed value of the IVR of each address is described on Table 8-2 and, at power-up, these data byte set the output voltage of each rail.

Write description: The user has to program all data registers first (00h ~ 18h), then set the WED (Write EEPROM Data) bit to 1 once all desired data are addressed. A dead time of 50 ms is then initiated during which all the register data (00h ~ 18h) are stored into the non volatile EEPROM cell. During that time, there should be no data flowing through the I²C because the I²C interface is momentarily not responding.

After the 50 ms have passed, the WED bit is automatically reset to 0, and the user is able to read the values or program again.

Slave address:	0100000X
X = R/W	R/W = 1 → read mode
	R/W = 0 → write mode

Table 11-1 Register Map

REGISTER	NAME	ADDRESS	FACTORY VALUE	BIT COUNT	STEPS COUNT
VDD	Boost	00h	21h	6	64
VCC	Buck	01h	09h for TPS65175	4	13
VCC	Buck	01h	03h for TPS65175A	4	13
VGH_LT	Positive charge pump - Low Temperature	02h	0Bh	4	16
VGH_HT	Positive charge pump - High Temperature	03h	0Bh	4	16
VGL	Negative charge pump	04h	20h	6	64
DLY0	Enable delay	05h	01h	3	8
DLY1	V_GL delay	06h	01h	3	8
DLY2	V_DD delay	07h	03h	3	8
DLY3	V_GH delay	08h	03h	3	8
GMA1	Gamma buffer 1	09h	01h	1	512
GMA1	Gamma buffer 1	0Ah	5Fh	8	512
GMA2	Gamma buffer 2	0Bh	01h	1	512
GMA2	Gamma buffer 2	0Ch	06h	8	512
GMA3	Gamma buffer 3	0Dh	00h	1	512
GMA3	Gamma buffer 3	0Eh	86h	8	512
GMA4	Gamma buffer 4	0Fh	01h	1	512
GMA4	Gamma buffer 4	10h	86h	8	512
GMA5	Gamma buffer 5	11h	01h	1	512
GMA5	Gamma buffer 5	12h	0Ch	8	512
GMA6	Gamma buffer 6	13h	00h	1	512
GMA6	Gamma buffer 6	14h	9Fh	8	512
VCOM	VCOM reference	15h	00h	1	391 / 211
VCOM	VCOM reference	16h	DFh	8	391 / 211
VCOM Operation	VCOM Output Range VCOM High Temperature VCOM Gain	17h	00h	8	256
VCOM Temp. + Osc. Freq.	VCOM Temp. Range Oscillator Frequency	18h	08h	4	16
CR	Control Register	FFh	–	8	1