ZHCSBB4B July 2013 – June 2017 TPS61197
PRODUCTION DATA.
The TPS61197 demands a power N-MOSFET (see Q1 in Figure 18) as a switch. The voltage and current rating of the MOSFET must be higher than the application output voltage and the inductor peak current. The applications benefit from the addition of a resistor (see R10 in Figure 18) connected between the GDRV pin and the gate of the switch MOSFET. With this resistor, the gate driving current is limited and the EMI performance is improved. TI recommends 3-Ω resistor value. The TPS61197 exhibits lower efficiency when the resistor value is above 3 Ω due to the more switching loss of the external MOSFET.