ZHCSD56 December   2014 TPS61175-Q1

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用范围
  3. 3 说明
  4. 4 简化电路原理图
  5. 5 修订历史记录
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Switching Frequency
      2. 8.3.2 Soft Start
      3. 8.3.3 Overcurrent Protection
      4. 8.3.4 Enable and Thermal Shutdown
      5. 8.3.5 Under Voltage Lockout (UVLO)
    4. 8.4 Device Functional Modes
      1. 8.4.1 Minimum on Time and Pulse Skipping
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Determining the Duty Cycle
        2. 9.2.2.2 Selecting the Inductor
        3. 9.2.2.3 Computing the Maximum Output Current
        4. 9.2.2.4 Setting Output Voltage
        5. 9.2.2.5 Setting the Switching Frequency
        6. 9.2.2.6 Setting the Soft Start Time
        7. 9.2.2.7 Selecting the Schottky Diode
        8. 9.2.2.8 Selecting the Input and Output Capacitors
        9. 9.2.2.9 Compensating the Small Signal Control Loop
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Thermal Considerations
  12. 12器件和文档支持
    1. 12.1 商标
    2. 12.2 静电放电警告
    3. 12.3 术语表
  13. 13机械封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7 Specifications

7.1 Absolute Maximum Ratings(1)

over operating free-air temperature range (unless otherwise noted)
VALUE UNIT
MIN MAX
Supply Voltages on pin VIN (2) –0.3 20 V
Voltages on pins EN(2) –0.3 20 V
Voltage on pin FB, FREQ and COMP(2) –0.3 3 V
Voltage on pin SYNC, SS(2) –0.3 7 V
Voltage on pin SW(2) –0.3 40 V
Continuous Power Dissipation See the Thermal Information Table
Operating Junction Temperature Range –40 150 °C
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground terminal.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) ±2000 V
Charged-device model (CDM), per AEC Q100-011 All pins except 1, 7, 8, and 14 ±500
Pins 1, 7, 8, and 14 ±750
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VIN Input voltage range 2.9 18 V
VO Output voltage range VIN 38 V
L Inductor(1) 4.7 47 μH
fSW Switching frequency 200 2200 kHz
CI Input Capacitor 4.7 μF
CO Output Capacitor 4.7 μF
VSYN External Switching Frequency Logic 5 V
TA Operating ambient temperature –40 125 °C
TJ Operating junction temperature –40 125 °C
(1) The inductance value depends on the switching frequency and end application. While larger values may be used, values between 4.7-μH and 47-μH have been successfully tested in various applications. Refer to the Inductor Selection for detail.

7.4 Thermal Information

THERMAL METRIC(1) TPS61175-Q1 UNIT
PWP
14 PINS
RθJA Junction-to-ambient thermal resistance 45.2 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 34.9
RθJB Junction-to-board thermal resistance 30.1
ψJT Junction-to-top characterization parameter 1.5
ψJB Junction-to-board characterization parameter 29.9
RθJC(bot) Junction-to-case (bottom) thermal resistance 5.8
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

FSW = 1.2 MHz (Rfreq = 80 kΩ), VIN = 3.6V, TA = TJ = –40°C to 125°C, typical values are at TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY CURRENT
VIN Input voltage range 2.9 18 V
IQ Operating quiescent current into Vin Device PWM switching without load 3.5 mA
ISD Shutdown current EN = GND 1.5 μA
VUVLO Under-voltage lockout threshold 2.5 2.7 V
Vhys Under-voltage lockout hysteresis 130 mV
ENABLE AND REFERENCE CONTROL
V(ENh) EN logic high voltage VIN = 2.9 V to 18 V 1.2 V
V(ENl) EN logic low voltage VIN = 2.9 V to 18 V 0.4 V
V(SYNh) SYN logic high voltage 1.2 V
V(SYNl) SYN logic low voltage 0.4 V
R(EN) EN pull down resistor 400 800 1600 kΩ
VOLTAGE AND CURRENT CONTROL
VREF Voltage feedback regulation voltage 1.204 1.229 1.254 V
IFB Voltage feedback input bias current 200 nA
Isink Comp pin sink current VFB = VREF + 200 mV, VCOMP = 1 V 50 μA
Isource Comp pin source current VFB = VREF –200 mV, VCOMP = 1 V 130 μA
VCCLP Comp pin Clamp Voltage High Clamp, VFB = 1 V
Low Clamp, VFB = 1.5 V		 3
0.75		 V
V(CTH) Comp pin threshold Duty cycle = 0% 0.95 V
Gea Error amplifier transconductance 240 340 440 μmho
Rea Error amplifier output resistance 10 MΩ
fea Error amplifier crossover frequency 500 KHz
FREQUENCY
fS Oscillator frequency Rfreq = 480 kΩ 0.16 0.21 0.26 MHz
Rfreq = 80 kΩ 1.0 1.2 1.4
Rfreq = 40 kΩ 1.76 2.2 2.64
Dmax Maximum duty cycle VFB = 1.0 V, Rfreq = 80 kΩ 89% 93%
V(FREQ) FREQ pin voltage 1.229 V
POWER SWITCH
RDS(ON) N-channel MOSFET on-resistance VIN = VGS = 3.6 V
VIN = VGS = 3.0 V		 0.13
0.13		 0.25
0.3		 Ω
ILN_NFET N-channel leakage current VDS = 40 V, TA = 25°C 1 μA
OC, OVP AND SS
ILIM N-Channel MOSFET current limit D = Dmax 3 3.8 5 A
ISS Soft start bias current VSS = 0 V 6 μA
THERMAL SHUTDOWN
Tshutdown Thermal shutdown threshold 160 °C
Thysteresis Thermal shutdown threshold hysteresis 15 °C

7.6 Timing Requirements

MIN TYP MAX UNIT
ENABLE AND REFERENCE CONTROL
toff Shutdown delay, SS discharge EN high to low 10 ms
FREQUENCY
tmin_on Minimum on pulse width Rfreq = 80 kΩ 60 ns

7.7 Typical Characteristics

eff_io_lvscn9.gif
VI = 5 V
Figure 1. Efficiency vs Output Current
v_ta_lvs892.gifFigure 3. Error Amplifier Transconductance vs Free-Air Temperature
cur2_ta_lvs892.gifFigure 5. Overcurrent Limit vs Free-Air Temperature
eff2_io_lvscn9.gif
VO = 24 V
Figure 2. Efficiency vs Output Current
cur_dcycle_lvs892.gifFigure 4. Overcurrent Limit vs Duty Cycle
v_ta_2_lvs892.gifFigure 6. FB Voltages Free-Air Temperature