ZHCSJX1B NOVEMBER   2008  – June 2019 TPS40197

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      典型应用电路
  4. 4 修订历史记录
  5. 5 说明 （续）
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Package Dissipation Ratings
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Enable
      2. 8.3.2  Oscillator
      3. 8.3.3  UVLO
      4. 8.3.4  Start-up Sequence and Timing
      5. 8.3.5  Selecting the Short Circuit Current
      6. 8.3.6  Voltage Reference and Dynamic VID
      7. 8.3.7  Minimum On-Time Consideration
      8. 8.3.8  BP Regulator
      9. 8.3.9  Prebias Start-up
      10. 8.3.10 Drivers
      11. 8.3.11 Power Good
      12. 8.3.12 Thermal Shutdown
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
  10. 10器件和文档支持
    1. 10.1 器件支持
      1. 10.1.1 第三方产品免责声明
    2. 10.2 文档支持
      1. 10.2.1 相关器件
      2. 10.2.2 相关文档
    3. 10.3 接收文档更新通知
    4. 10.4 社区资源
    5. 10.5 商标
    6. 10.6 静电放电警告
    7. 10.7 Glossary
  11. 11机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

9.2.2 Detailed Design Procedure

For regulator stability, a 1-μF capacitor is required to be connected from BP to GND. In some applications using higher gate charge MOSFETs, a larger capacitor is required for noise suppression. For a total gate charge of both the high-side and low-side MOSFETs greater than 20 nC, a 2.2-μF or larger capacitor is recommended.

Equation 6. TPS40197 q_ig_lus853.gif

where

  • IG is the required gate drive current
  • fSW is the switching frequency
  • QG(high) is the gate charge requirement for the high-side FET when VGS = 5 V
  • QG(low) is the gate charge requirement for the low-side FET when VGS = 5 V