ZHCSAK8J December   2003  – June 2022 TPS40054 , TPS40055 , TPS40057

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 Recommended Operating Conditions
    3. 6.3 Thermal Information
    4. 6.4 Electrical Characteristics
    5. 6.5 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Setting the Switching Frequency (Programming the Clock Oscillator)
      2. 7.3.2 Programming The Ramp Generator Circuit
      3. 7.3.3 UVLO Operation
      4. 7.3.4 BP5 and BP10 Internal Voltage Regulators
      5. 7.3.5 Programming Soft Start
      6. 7.3.6 Programming Current Limit
      7. 7.3.7 Synchronizing to an External Supply
      8. 7.3.8 Loop Compensation
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Selecting the Inductor Value
      2. 8.1.2 Calculating the Output Capacitance
      3. 8.1.3 Calculating the Boost and BP10 Bypass Capacitor
      4. 8.1.4 DV-DT Induced Turn-On
      5. 8.1.5 High-Side MOSFET Power Dissipation
      6. 8.1.6 Synchronous Rectifier MOSFET Power Dissipation
      7. 8.1.7 TPS4005x Power Dissipation
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1  Calculate Maximum and Minimum Duty Cycles
        2. 8.2.2.2  Select Switching Frequency
        3. 8.2.2.3  Select ΔI
        4. 8.2.2.4  Calculate the High-Side MOSFET Power Losses
        5. 8.2.2.5  Calculate Synchronous Rectifier Losses
        6. 8.2.2.6  Calculate the Inductor Value
        7. 8.2.2.7  Set the Switching Frequency
        8. 8.2.2.8  Program the Ramp Generator Circuit
        9. 8.2.2.9  Calculate the Output Capacitance (CO)
        10. 8.2.2.10 Calculate the Soft-Start Capacitor (CSS/SD)
        11. 8.2.2.11 Calculate the Current Limit Resistor (RILIM)
        12. 8.2.2.12 Calculate Loop Compensation Values
        13. 8.2.2.13 Calculate the Boost and BP10V Bypass Capacitance
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 MOSFET Packaging
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 第三方产品免责声明
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 接收文档更新通知
    4. 11.4 支持资源
    5. 11.5 Trademarks
    6. 11.6 静电放电警告
    7. 11.7 术语表
  12. 12Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • PWP|16
散热焊盘机械数据 (封装 | 引脚)
订购信息

8.2.2.4 Calculate the High-Side MOSFET Power Losses

Power losses in the high-side MOSFET (Si7860DP) at 24-VIN where switching losses dominate can be calculated from Equation 52.

Equation 52. GUID-EEF92342-C900-4210-A6BF-7F3B38B683B4-low.gif

Substituting Equation 34 into Equation 33 yields

Equation 53. GUID-F4A3C4B8-CB90-4A6B-A99C-67A69C9299A8-low.gif

and from Equation 35, the switching losses can be determined.

Equation 54. GUID-0A726906-78F7-46BB-A7A0-222FF5BEA5C2-low.gif

The MOSFET junction temperature can be found by substituting Equation 53 and Equation 54 into Equation 36:

Equation 55. GUID-3A57C9B6-9484-4E62-BB18-07885C8C8BE3-low.gif