ZHCSNR4B May   2021  – April 2022 TPS25946

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Switching Characteristics
      1.      15
    8. 7.8 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Undervoltage Lockout (UVLO and UVP)
      2. 8.3.2 Overvoltage Lockout (OVLO)
      3. 8.3.3 Inrush Current, Overcurrent, and Short-Circuit Protection
        1. 8.3.3.1 Slew Rate (dVdt) and Inrush Current Control
        2. 8.3.3.2 Active Current Limiting
        3. 8.3.3.3 Short-Circuit Protection
      4. 8.3.4 Analog Load Current Monitor
      5. 8.3.5 Reverse Current Protection
      6. 8.3.6 Overtemperature Protection (OTP)
      7. 8.3.7 Fault Response and Indication (FLT)
      8. 8.3.8 Power Good Indication (PG)
      9. 8.3.9 Input Supply Good Indication (SPLYGD)
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Single Device, Self-Controlled
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Device Selection
        2. 9.2.2.2 Setting Overvoltage Threshold
        3. 9.2.2.3 Setting Output Voltage Rise Time (tR)
        4. 9.2.2.4 Setting Power Good Assertion Threshold
        5. 9.2.2.5 Setting Overcurrent Threshold (ILIM)
        6. 9.2.2.6 Setting Overcurrent Blanking Interval (tITIMER)
        7. 9.2.2.7 Selecting External Bias Resistor (R5)
        8. 9.2.2.8 Selecting External Diode (D1)
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
    1. 10.1 Transient Protection
    2. 10.2 Output Short-Circuit Measurements
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 接收文档更新通知
    3. 12.3 支持资源
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 术语表
  13. 13Mechanical, Packaging, and Orderable Information

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7.5 Electrical Characteristics

(Test conditions unless otherwise noted) –40°C ≤ TJ ≤ 125°C, VIN = 12 V, OUT = Open, VEN/UVLO = 2 V, VOVLO = 0 V, RILM = 549 Ω , dVdT = Open, ITIMER = Open, PGTH/FLT = Open, PG/SPLYGD = Open. All voltages referenced to GND.
Test Parameter Description MIN TYP MAX UNITS
INPUT SUPPLY (IN)
VUVP(R) IN Supply UVP Rising threshold 2.44 2.53 2.64 V
VUVP(F) IN Supply UVP Falling threshold 2.35 2.42 2.55 V
IQ(ON) IN Supply Quiescent Current 428 610 µA
IQ(OFF) IN Supply disabled State Current (VSD(F) < VEN < VUVLO(F)) 73 130 µA
ISD IN Supply Shutdown Current (VEN < VSD(F)) 4.4 28.7 µA
ON RESISTANCE (IN - OUT)
RON VIN = 12 V, IOUT = 3 A, TJ = 25℃ 28.3 mΩ
2.7 ≤ VIN ≤ 23 V, IOUT = 3 A, –40℃ ≤ TJ ≤ 125℃ 45 mΩ
ENABLE/UNDERVOLTAGE LOCKOUT (EN/UVLO)
VUVLO(R) UVLO Rising threshold 1.183 1.20 1.223 V
VUVLO(F) UVLO Falling threshold 1.076 1.09 1.116 V
VSD(F) EN/UVLO Falling Threshold for lowest shutdown current 0.45 0.74 V
IENLKG EN/UVLO leakage current –0.1 0.1 µA
OVERVOLTAGE LOCKOUT (OVLO)
VOV(R) OVLO Rising threshold 1.183 1.20 1.223 V
VOV(F) OVLO Falling threshold 1.076 1.09 1.116 V
IOVLKG OVLO pin leakage current, 0.5 V < VOVLO  < 1.5 V –0.1 0.1 µA
OVERCURRENT PROTECTION (OUT)
ILIM Overcurrent Threshold, RILM = 6.65 kΩ 0.425 0.500 0.575 A
Overcurrent Threshold, RILM = 3.32 kΩ 0.850 1.007 1.150 A
Overcurrent Threshold, RILM = 1.65 kΩ 1.800 2.028 2.200 A
Overcurrent Threshold, RILM = 750 Ω 3.960 4.452 4.840 A
Overcurrent Threshold, RILM = 549 Ω 5.400 6.068 6.600 A
IFLT Circuit Breaker Threshold, ILM Pin Open (Single point failure) 0.1 A
Circuit Breaker Threshold, ILM Pin Shorted to GND (Single point failure) 1.1 2.1 A
ISCGain Scalable Fast Trip Threshold (ISC) : ILIM Ratio 201 %
IFT Fixed Fast-trip current threshold 22.2 A
VFB VOUT threshold to exit Current Limit Foldback 1.9 V
OVERCURRENT FAULT TIMER (ITIMER)
VINT ITIMER pin internal pull-up voltage 2.3 2.57 2.72 V
RITIMER ITIMER pin internal pull-up resistance 15 kΩ
IITIMER ITIMER pin internal discharge current, IOUT > ILIM 1.2 1.8 2.5 µA
ΔVITIMER ITIMER discharge differential voltage threshold 1.286 1.51 1.741 V
OUTPUT LOAD CURRENT MONITOR (ILM)
GIMON Analog Load Current Monitor Gain (IMON : IOUT), IOUT = 0.5 A to 1 A, IOUT < ILIM 165 182 200 µA/A
Analog Load Current Monitor Gain (IMON : IOUT), IOUT = 1 A to 5.5 A, IOUT < ILIM 165 182 200 µA/A
POWER GOOD INDICATION (PG) - TPS259460x OR SUPPLY GOOD INDICATION (SPLYGD) - TPS259461x
VPGD PG/SPLYGD pin voltage while de-asserted. VIN < VUVP(F), VEN < VSD(F), Weak pull-up (IPG = 26 μA) 0.67 1 V
PG/SPLYGD pin voltage while de-asserted, VIN < VUVP(F), VEN < VSD(F), Strong pull-up (IPG = 242 μA) 0.79 1 V
PG/SPLYGD pin voltage while de-asserted, VIN > VUVP(R) 0 V
IPGLKG PG/SPLYGD Pin leakage current, PG/SPLYGD asserted 0.9 3 µA
POWERGOOD THRESHOLD (PGTH) - TPS259460x
VPGTH(R) PGTH Rising threshold 1.183 1.20 1.223 V
VPGTH(F) PGTH Falling threshold 1.076 1.09 1.116 V
IPGTHLKG PGTH leakage current –0.1 0.3 µA
FAULT INDICATION (FLT) - TPS259461x
IFLTLKG FLT pin leakage current –1 1 µA
RFLTB FLT pin pull-down resistance 12.3 Ω
OVERTEMPERATURE PROTECTION (OTP)
TSD Thermal Shutdown Rising Threshold, TJ↑ 154 °C
TSDHYS Thermal Shutdown Hysteresis, TJ↓ 10 °C
DVDT
IdVdt dVdt Pin Charging Current 0.81 2.21 3.82 µA