ZHCSNR4B 数据表 | 德州仪器 TI.com.cn

ZHCSNR4B May 2021 – April 2022 TPS25946

PRODUCTION DATA

封装选项

机械数据 (封装 | 引脚)

RPW|10
- MPQF568

散热焊盘机械数据 (封装 | 引脚)

订购信息

7.8 Typical Characteristics

Figure 7-2 ON-Resistance vs Supply Voltage

Figure 7-4 IN OFF State (UVLO) Current vs Temperature

Figure 7-6 IN Undervoltage Threshold vs Temperature

Figure 7-8 EN/UVLO Falling Threshold vs Temperature

Figure 7-10 OVLO Rising Threshold vs Temperature

Figure 7-12 Overcurrent Threshold vs ILM Resistor

Figure 7-14 Analog Current Monitor Gain Accuracy

Figure 7-16 Steady State Fixed Fast-Trip Current Threshold vs Temperature

Figure 7-18 ITIMER Discharge Current vs Temperature

Figure 7-20 ITIMER Internal Pullup Voltage vs Temperature

Figure 7-22 PGTH Threshold vs Temperature

Figure 7-24 Time to Thermal Shut-Down During Inrush State

V_IN = 12 V, C_OUT = 30 μF, C_dVdt = Open, V_EN/UVLO stepped up to 1.4 V

Figure 7-26 Start-Up with Enable

C_OUT = 220 μF, C_dVdt = 10 nF, EN/UVLO connected to IN through resistor ladder, 12 V hot-plugged to IN

Figure 7-28 IN Hot-Plug

V_IN = 12 V, C_OUT = 470 μF, R_OUT = 5 Ω, C_dVdt = 3300 pF, V_EN/UVLO stepped up to 1.4 V

Figure 7-30 Inrush Current with Resistive and Capacitive Load

V_IN = 12 V, C_ITIMER = 2.2 nF, C_OUT = 470 μF, R_ILM = 549 Ω, I_OUT ramped from 4 A → 8 A→ 4 A within 1 ms

Figure 7-32 Transient Overcurrent Blanking Timer Response

V_IN = 12 V, C_ITIMER = 2.2 nF, C_OUT = 220 μF, R_ILM = 549 Ω, I_OUT stepped from 3 A → 9 A

Figure 7-34 Active Current Limit Response Followed by TSD

V_IN = 12 V, R_ILM = 549 Ω, V_EN/UVLO = 3.3 V, OUT stepped from Open → Short-circuit to GND

Figure 7-36 OUT Pin Short-Circuit During Steady State (Zoomed In)

Figure 7-3 IN Quiescent Current vs Temperature

Figure 7-5 IN Shutdown Current vs Temperature

Figure 7-7 EN/UVLO Rising Threshold vs Temperature

Figure 7-9 EN/UVLO Shutdown Falling Threshold vs Temperature

Figure 7-11 OVLO Falling Threshold vs Temperature

Figure 7-13 Overcurrent Threshold Accuracy (Across Process, Voltage, and Temperature)

Figure 7-15 Scalable Fast-Trip Threshold: Current Limit Threshold (I_LIM) Ratio vs Temperature

Figure 7-17 ITIMER Discharge Differential Voltage Threshold vs Temperature

Figure 7-19 ITIMER Internal Pullup Resistance vs Temperature

Figure 7-21 DVDT Charging Current vs Temperature

Figure 7-23 PG Low Voltage Without Input Supply vs Temperature

Figure 7-25 Time to Thermal Shut-Down During Steady State

V_EN/UVLO = 3.3 V, C_OUT = 30 μF, C_dVdt = Open, V_IN ramped up to 12 V

Figure 7-27 Start-Up with IN Supply

V_IN = 12 V, C_OUT = 470 μF, C_dVdt = 3300 pF, V_EN/UVLO stepped up to 1.4 V

Figure 7-29 Inrush Current with Capacitive Load

C_OUT = 220 μF, I_OUT = 4 A, V_IN Overvoltage threshold set to 22 V, V_IN ramped up from 20 V to 23 V

Figure 7-31 Overvoltage Lockout Response

V_IN = 12 V, C_ITIMER = 2.2 nF, C_OUT = 220 μF, R_ILM = 549 Ω, I_OUT stepped from 3 A → 9 A → 3 A within 5 ms

Figure 7-33 Active Current Limit Response

V_IN = 12 V, R_ILM = 549 Ω, V_EN/UVLO = 3.3 V, OUT stepped from Open → Short-circuit to GND

Figure 7-35 OUT Pin Short-Circuit During Steady State

V_IN = 5 V, C_OUT = Open, OUT short-circuit to GND, R_ILM = 750 Ω, V_EN/UVLO stepped from 0 V to 3.3 V

Figure 7-37 Power Up with OUT Pin Short-Circuit to GND