ZHCSCB9D April   2014  – December 2019

PRODUCTION DATA.

1. 特性
2. 应用
3. 说明
1.     Device Images
4. 修订历史记录
5. Device Comparison Table
6. Pin Configuration and Functions
7. Specifications
8. Parameter Measurement Information
9. Detailed Description
10. 10Application and Implementation
1. 10.1 Application Information
2. 10.2 Typical Application
11. 11Power Supply Recommendations
12. 12Layout
13. 13器件和文档支持
1. 13.1 文档支持
2. 13.2 接收文档更新通知
3. 13.3 社区资源
4. 13.4 商标
5. 13.5 静电放电警告
6. 13.6 Glossary
14. 14机械、封装和可订购信息

#### 封装选项

• DSG|8
• DSG|8
##### 订购信息

A capacitor to GND on the CT pin sets the slew rate. The voltage on the CT pin can be as high as 12 V. Therefore, the minimum voltage rating for the CT cap must be 25 V for optimal performance. An approximate formula for the relationship between CT and slew rate when VBIAS is set to 5 V is shown in Equation 1. This equation accounts for 10% to 90% measurement on VOUT and does NOT apply for CT = 0 pF. Use Table 1 to determine rise times for when CT = 0 pF.

Equation 1.

where

• SR = slew rate (in µs/V)
• CT = the capacitance value on the CT pin (in pF)
• The units for the constant 34 are µs/V. The units for the constant 0.38 are µs/(V × pF).

Rise time can be calculated by multiplying the input voltage by the slew rate. Table 1 contains rise time values measured on a typical device. The rise times listed in Table 1 are only valid for the power-up sequence where VIN and VBIAS are already in steady state condition before the ON pin is asserted high.

### Table 1. Rise Time vs CT Capacitor

CT (pF) RISE TIME (µs) 10% - 90%, CL = 0.1 µF, CIN = 1 µF, RL = 10 Ω, VBIAS = 5 V (1)
VIN = 5 V VIN = 3.3 V VIN = 1.8 V VIN = 1.5 V VIN = 1.2 V VIN = 1.05 V VIN = 0.8 V
0 180 136 94 84 74 70 60
220 547 378 232 202 173 157 129
470 962 654 386 333 282 252 206
1000 1983 1330 765 647 533 476 382
2200 4013 2693 1537 1310 1077 959 766
4700 8207 5490 3137 2693 2200 1970 1590
10000 17700 11767 6697 5683 4657 4151 3350
Typical Values at 25°C with a 25-V X7R 10% Ceramic Capacitor on CT