ZHCSSK0N june   2010  – july 2023 TPS2041B , TPS2042B , TPS2043B , TPS2044B , TPS2051B , TPS2052B , TPS2053B , TPS2054B

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 General Switch Catalog
  7. 6 Pin Configuration and Functions
  8. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Dissipation Ratings
    7. 7.7 Typical Characteristics (All Devices Excluding TPS2051BDBV and TPS2052BD)
    8. 7.8 Typical Characteristics (TPS2051BDBV and TPS2052BD)
  9. 8 Parameter Measurement Information
  10. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagrams
    3. 9.3 Feature Description
      1. 9.3.1  Power Switch
      2. 9.3.2  Charge Pump
      3. 9.3.3  Driver
      4. 9.3.4  Enable ( ENx)
      5. 9.3.5  Enable (ENx)
      6. 9.3.6  Current Sense
      7. 9.3.7  Overcurrent
        1. 9.3.7.1 Overcurrent Conditions (All Devices Excluding TPS2051BDBV, TPS2052BD)
        2. 9.3.7.2 Overcurrent Conditions (TPS2051BDBV, TPS2052BD)
      8. 9.3.8  Overcurrent ( OCx)
      9. 9.3.9  Thermal Sense
      10. 9.3.10 Undervoltage Lockout
    4. 9.4 Device Functional Modes
  11. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Universal Serial Bus (USB) Applications
    2. 10.2 Typical Application
      1. 10.2.1 Typical Application (TPS2042B)
        1. 10.2.1.1 Design Requirements
        2. 10.2.1.2 Detailed Design Procedure
          1. 10.2.1.2.1 Power-Supply Considerations
          2. 10.2.1.2.2 OC Response
        3. 10.2.1.3 Application Curves
      2. 10.2.2 Host and Self-Powered and Bus-Powered Hubs
        1. 10.2.2.1 Design Requirements
          1. 10.2.2.1.1 USB Power-Distribution Requirements
        2. 10.2.2.2 Detailed Design Procedure
          1. 10.2.2.2.1 Low-Power Bus-Powered and High-Power Bus-Powered Functions
        3. 10.2.2.3 Application Curves
      3. 10.2.3 Generic Hot-Plug Applications
        1. 10.2.3.1 Design Requirements
        2. 10.2.3.2 Detailed Design Procedure
        3. 10.2.3.3 Application Curves
  12. 11Power Supply Recommendations
    1. 11.1 Undervoltage Lockout (UVLO)
  13. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
    3. 12.3 Power Dissipation
    4. 12.4 Thermal Protection
  14. 13Device and Documentation Support
    1. 13.1 接收文档更新通知
    2. 13.2 Related Links
    3. 13.3 支持资源
    4. 13.4 Trademarks
    5. 13.5 静电放电警告
    6. 13.6 术语表
  15. 14Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.5 Electrical Characteristics

over recommended operating junction temperature range, VI(IN) = 5.5 V, IO = 0.5 A, VI(/ENx) = 0 V (unless otherwise noted)
PARAMETER TEST CONDITIONS(1) MIN TYP MAX UNIT
POWER SWITCH
rDS(on) Static drain-source on-state resistance, 5-V operation and 3.3-V operation VI(IN) = 5 V or 3.3 V, IO = 0.5 A,
-40°C ≤ TJ ≤ 125°C		 D and DGN packages 70 135 mΩ
DBV package only 95 140
Static drain-source on-state resistance, 2.7-V operation VI(IN) = 2.7 V, IO = 0.5 A,
–40°C ≤ TJ ≤ 125°C		 D and DGN packages 75 150 mΩ
Static drain-source on-state resistance, 5-V operation VI(IN) = 5 V, IO = 1 A, OUT1 and OUT2
connected, 0°C ≤ TJ ≤ 70°C		 DGN package, TPS2042B/52B 49 mΩ
tr Rise time, output VI(IN) = 5.5 V CL = 1 μF,
RL = 10 Ω		 TJ = 25°C 0.6 1.5 ms
VI(IN) = 2.7 V 0.4 1
tf Fall time, output VI(IN) = 5.5 V 0.05 0.5
VI(IN) = 2.7 V 0.05 0.5
ENABLE INPUT EN AND ENx
VIH High-level input voltage 2.7 V ≤ VI(IN) ≤ 5.5 V 2 V
VIL Low-level input voltage 2.7 V ≤ VI(IN) ≤ 5.5 V 0.8
II Input current VI( ENx) = 0 V or 5.5 V –0.5 0.5 μA
ton Turnon time CL = 100 μF, RL = 10 Ω 3 ms
toff Turnoff time CL = 100 μF, RL = 10 Ω 10
CURRENT LIMIT
IOS Short-circuit output current VI(IN) = 5 V, OUT connected to GND,
device enabled into short-circuit		 TJ = 25°C 0.75 1 1.25 A
–40°C ≤ TJ ≤ 125°C 0.7 1 1.3
VI(IN) = 5 V, OUT1 and OUT2 connected to
GND, device enabled into short-circuit, measure at IN		 0°C ≤ TJ ≤ 70°C
TPS2042B/52B		 1.5
IOC(2) Overcurrent trip threshold VIN = 5 V, 100 A/s

TPS2041B

TPS2051B (D and DGN packages only)

 IOS 1.5 1.9 A

TPS2042B

TPS2052B (DGN package only)		 IOS 1.55 2
SUPPLY CURRENT (TPS2041B, TPS2051B)
Supply current, low-level output No load on OUT, VI( ENx) = 5.5 V,
or VI(ENx) = 0 V		 TJ = 25°C 0.5 1 μA
-40°°C ≤ TJ ≤ 125°C 0.5 5
Supply current, high-level output No load on OUT, VI( ENx) = 0 V,
or VI(ENx) = 5.5 V

TPS2041B

TPS2051B (D and DGN packages only)

 TJ = 25°C 43 60 μA
–40°C ≤ TJ ≤ 125°C 43 70
TPS2051BDBV TJ = 25°C 75 95
–40°C ≤ TJ ≤ 125°C 75 95
Leakage current OUT connected to ground, VI( ENx) = 5.5 V,
or VI(ENx) = 0 V		 –40°C ≤ TJ ≤ 125°C 1 μA
Reverse leakage current VI(OUTx) = 5.5 V, IN = ground TJ = 25°C 0 μA
SUPPLY CURRENT (TPS2042B, TPS2052B)
Supply current, low-level output No load on OUT, VI( ENx) = 5.5 V TJ = 25°C 0.5 1 μA
–40°C ≤ TJ ≤ 125°C 0.5 5
Supply current, high-level output No load on OUT, VI( ENx) = 0 V

TPS2042B

TPS2052B (DGN package only)		 TJ = 25°C 50 70 μA
–40°C ≤ TJ ≤ 125°C 50 90
TPS2052BD TJ = 25°C 95 120 uA
–40°C ≤ TJ ≤ 125°C 95 120
Leakage current OUT connected to ground, VI( ENx) = 5.5 V –40°C ≤ TJ ≤ 125°C 1 μA
Reverse leakage current VI(OUTx) = 5.5 V, IN = ground TJ = 25°C 0.2 μA
SUPPLY CURRENT (TPS2043B, TPS2053B)
Supply current, low-level output No load on OUT, VI(ENx) = 0 V TJ = 25°C 0.5 2 μA
–40°C ≤ TJ ≤ 125°C 0.5 10
Supply current, high-level output No load on OUT, VI(ENx) = 5.5 V TJ = 25°C 65 90 μA
–40°C ≤ TJ ≤ 125°C 65 110
Leakage current OUT connected to ground, VI(ENx) = 0 V –40°C≤ TJ ≤ 125°C 1 μA
Reverse leakage current VI(OUTx) = 5.5 V, INx = ground TJ = 25°C 0.2 μA
SUPPLY CURRENT (TPS2044B, TPS2054B)
Supply current, low-level output No load on OUT, VI( ENx) = 5.5 V,
or VI(ENx) = 0 V		 TJ = 25°C 0.5 2 μA
–40°C ≤ TJ ≤ 125°C 0.5 10
Supply current, high-level output No load on OUT, VI( ENx) = 0 V,
or VI(ENx) = 5.5 V		 TJ = 25°C 75 110 μA
–40°C ≤ TJ ≤ 125°C 75 140
Leakage current OUT connected to ground, VI( ENx) = 5.5 V,
or VI(ENx) = 0 V		 –40°C≤ TJ ≤ 125°C 1 μA
Reverse leakage current VI(OUTx) = 5.5 V, INx = ground TJ = 25°C 0.2 μA
UNDERVOLTAGE LOCKOUT (All Devices excluding TPS2051BDBV and TPS2052BD)
Low-level input voltage, IN, INx 2 2.5 V
Hysteresis, IN, INx TJ = 25°C 75 mV
UNDERVOLTAGE LOCKOUT (TPS2051BDBV and TPS2052BD)
Low-level input voltage, IN, INx 2 2.6 V
Hysteresis, IN, INx TJ = 25°C 75 mV
OVERCURRENT OC and OCx
Output low voltage, VOL(/OCx) IO( OCx) = 5 mA 0.4 V
Off-state current VO( OCx) = 5 V or 3.3 V 1 μA
OC deglitch OCx assertion or deassertion 4 8 15 ms
THERMAL SHUTDOWN(3)
Thermal shutdown threshold 135 °C
Recovery from thermal shutdown 125 °C
Hysteresis 10 °C
(1) Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
(2) TPS2051BDBV and TPS2052BD don't have overcurrent trip threshold. Current will be limited to IOS under different test conditon. Check Section 9.3.7 for more details.
(3) The thermal shutdown only reacts under overcurrent conditions.