产品详细信息

Vin (Min) (V) 2.7 Vin (Max) (V) 5.5 Continuous current (Max) (A) 0.5 Current limit (A) 1 Product type Fixed current limit, Power switch Operating temperature range (C) -40 to 85 Enable Active High Number of switches 2 Rating Catalog
Vin (Min) (V) 2.7 Vin (Max) (V) 5.5 Continuous current (Max) (A) 0.5 Current limit (A) 1 Product type Fixed current limit, Power switch Operating temperature range (C) -40 to 85 Enable Active High Number of switches 2 Rating Catalog
HVSSOP (DGN) 8 9 mm² 3 x 3 SOIC (D) 8 19 mm² 3.91 x 4.9 VSON (DRB) 8 9 mm² 3 x 3
  • 70-mΩ High-Side MOSFET
  • 500-mA Continuous Current
  • Thermal and Short-Circuit Protection
  • Accurate Current Limit
    (0.75 A Minimum, 1.25 A Maximum)
  • Operating Range: 2.7 V to 5.5 V
  • 0.6-ms Typical Rise Time
  • Undervoltage Lockout
  • Deglitched Fault Report (OC)
  • No OC Glitch During Power Up
  • Maximum Standby Supply Current:
    1-µA (Single, Dual) or 2-µA (Triple, Quad)
  • Ambient Temperature Range: –40°C to 85°C
  • UL Recognized, File Number E169910
  • Additional UL Recognition for TPS2042B and TPS2052B for Ganged Configuration
  • 70-mΩ High-Side MOSFET
  • 500-mA Continuous Current
  • Thermal and Short-Circuit Protection
  • Accurate Current Limit
    (0.75 A Minimum, 1.25 A Maximum)
  • Operating Range: 2.7 V to 5.5 V
  • 0.6-ms Typical Rise Time
  • Undervoltage Lockout
  • Deglitched Fault Report (OC)
  • No OC Glitch During Power Up
  • Maximum Standby Supply Current:
    1-µA (Single, Dual) or 2-µA (Triple, Quad)
  • Ambient Temperature Range: –40°C to 85°C
  • UL Recognized, File Number E169910
  • Additional UL Recognition for TPS2042B and TPS2052B for Ganged Configuration

The TPS20xxB power-distribution switches are intended for applications where heavy capacitive loads and short circuits are likely to be encountered. These devices incorporates 70-mΩ N-channel MOSFET power switches for power-distribution systems that require multiple power switches in a single package. Each switch is controlled by a logic enable input. Gate drive is provided by an internal charge pump designed to control the power-switch rise times and fall times to minimize current surges during switching. The charge pump requires no external components and allows operation from supplies as low as 2.7 V.

When the output load exceeds the current-limit threshold or a short is present, the device limits the output current to a safe level by switching into a constant-current mode, pulling the overcurrent (OCx) logic output low. When continuous heavy overloads and short circuits increase the power dissipation in the switch, causing the junction temperature to rise, a thermal protection circuit shuts off the switch to prevent damage. Recovery from a thermal shutdown is automatic once the device has cooled sufficiently. Internal circuitry ensures that the switch remains off until valid input voltage is present. This power-distribution switch is designed to set current limit at 1 A (typical).

The TPS20xxB power-distribution switches are intended for applications where heavy capacitive loads and short circuits are likely to be encountered. These devices incorporates 70-mΩ N-channel MOSFET power switches for power-distribution systems that require multiple power switches in a single package. Each switch is controlled by a logic enable input. Gate drive is provided by an internal charge pump designed to control the power-switch rise times and fall times to minimize current surges during switching. The charge pump requires no external components and allows operation from supplies as low as 2.7 V.

When the output load exceeds the current-limit threshold or a short is present, the device limits the output current to a safe level by switching into a constant-current mode, pulling the overcurrent (OCx) logic output low. When continuous heavy overloads and short circuits increase the power dissipation in the switch, causing the junction temperature to rise, a thermal protection circuit shuts off the switch to prevent damage. Recovery from a thermal shutdown is automatic once the device has cooled sufficiently. Internal circuitry ensures that the switch remains off until valid input voltage is present. This power-distribution switch is designed to set current limit at 1 A (typical).

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技术文档

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类型 项目标题 下载最新的英语版本 日期
* 数据表 TPS20xxB Current-Limited, Power-Distribution Switches 数据表 (Rev. M) 2016年 6月 19日
技术文章 3 quiescent-current (Iq) specifications you need to understand 2021年 11月 12日
证书 US-36986-UL Certificate of Compliance IEC 62368-1 2021年 3月 12日
用户指南 Two-Channel, Power-Distribution Switch EVM (Rev. A) 2012年 6月 1日

设计和开发

如需其他信息或资源,请查看下方列表,点击标题即可进入详情页面。

评估板

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The TPS2052BEVM-293 is an evaluation module (EVM) for the Texas Instruments family of two-channel, current-limited, power-distribution switches. This EVM operates over a 2.7 V to 5.5 V range and provide a continuous output current of up to 1.5 A. Test points provide convenient (...)

现货
数量限制: 5
开发工具套件

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开始使用 LaunchPad 来进行开发:
第 1 步:购买 MSP-EXP432E401Y LaunchPad
第 2 步:下载 MSP432 SDK
第 3 步:完成开箱即用体验接受 SimpleLink Academy 培训

SimpleLink™ 以太网 MSP432E401Y 微控制器 LaunchPad™ 开发套件是针对基于 SimpleLink™ Arm® Cortex®-M4F 的以太网 MCU 的直观评估平台。以太网 LaunchPad 开发套件通过集成以太网 MAC 和一系列有线通信接口(包括 (...)

仿真模型

TPS2052B Unencrypted PSpice Transient Model Package (Rev. A)

SLVM476A.ZIP (33 KB) - PSpice Model
参考设计

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此参考设计展示了如何实施非易失性存储器和 SDRAM 并通过接口将其连接至 TM4C 产品系列中的高性能微控制器 TM4C1294NCPDT。为了实现此设计,其中采用了微控制器的 EPI 接口在 60MHz 下连接 256Mbit SDRAM,而采用 QSSI 接口在 60MHz 下连接非易失性存储器(如 SD 卡和四串行闪存),因此可让开发人员在 TM4C1294 微控制器的最大内部存储器基础上扩展代码和数据空间。
参考设计

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TIDM-MINI-DC 参考设计可实现集成以太网中继器功能的轻量级电力线通信 (PLC) 数据集中器 (DC) 解决方案。电网是静态网络,这意味着终端节点一旦安装,DC 所需支持的节点数量将是固定的。电力公司经常出现多个馈电线路仅有少量终端客户的情况。为这些馈电线路安装能够支持大量终端节点的高性能 DC 解决方案是不符合成本效益的。该设计可提供低成本 PLC 直流解决方案,能够利用以太网中继器(或边缘路由器)功能支持更小的网络,从而将本地 PLC 网络与基于以太网的主干网络互联,使控制中心可直接控制 PLC 终端节点。
参考设计

TIDM-TM4C129XBLE — 采用高性能 MCU 且支持 BLE 功能的 IoT 节点参考设计

通过一个系统示例来说明如何集成来自 TM4C 产品系列的 TM4C1294 MCU 和 CC2650 器件从而构建 BLE 节点。此参考设计展示了通过互联网来远程控制 MCU 运行状态的功能。
参考设计

TIDM-TM4CFLASHSRAM — 用于高性能 MCU 上的代码下载与执行的并发并行 XIP 闪存和 SRAM 设计

此参考设计展示了如何实现异步并列式闪存和 SRAM 存储器并将其连接到性能微控制器 TM4C129。通过在主机总线 16 模式下使用 EPI 接口并提供用于连接 1Gbit-8Mbit 范围的 16 位并列式闪存和 16Mbit 16 位并行式 SRAM 的多种芯片选择来构建此实施,开发人员便可将代码和数据空间扩展到 TM4C1294 微控制器最大内部存储器的范围之外。
参考设计

TIDM-TM4C129XS2E — 基于 RTOS 和高性能 MCU 的可配置串口转以太网转换器参考设计

传统产品可能只包含一个串行端口。由于此类终端设备 (EE) 无法添加到共享网络并远距离访问(例如从远程控制站访问),因此其访问正日益成为一项挑战。串行转以太网 (S2E) 转换器提供了一种简单的方法来克服此类 EE 带来的挑战。此参考设计利用基于以太网的 TM4C129x(以前称为 Tiva)微控制器来实现 S2E 转换器,从而加快上市时间并节省成本。
封装 引脚数 下载
HVSSOP (DGN) 8 了解详情
SOIC (D) 8 了解详情
SON (DRB) 8 了解详情

订购和质量

包含信息:
  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 认证摘要
  • 持续可靠性监测

支持与培训

视频