ZHCSNN1A February   2023  – September 2023 TMUX7221 , TMUX7222

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Thermal Information
    4. 6.4  Recommended Operating Conditions
    5. 6.5  Source or Drain Continuous Current
    6. 6.6  ±15 V Dual Supply: Electrical Characteristics 
    7. 6.7  ±15 V Dual Supply: Switching Characteristics 
    8. 6.8  ±20 V Dual Supply: Electrical Characteristics
    9. 6.9  ±20 V Dual Supply: Switching Characteristics
    10. 6.10 44 V Single Supply: Electrical Characteristics 
    11. 6.11 44 V Single Supply: Switching Characteristics 
    12. 6.12 12 V Single Supply: Electrical Characteristics 
    13. 6.13 12 V Single Supply: Switching Characteristics 
    14. 6.14 Typical Characteristics
  8. 7 Parameter Measurement Information
    1. 7.1  On-Resistance
    2. 7.2  Off-Leakage Current
    3. 7.3  On-Leakage Current
    4. 7.4  tON(EN) and tOFF(EN)
    5. 7.5  tON (VDD) Time
    6. 7.6  Propagation Delay
    7. 7.7  Charge Injection
    8. 7.8  Off Isolation
    9. 7.9  Crosstalk
    10. 7.10 Bandwidth
    11. 7.11 THD + Noise
    12. 7.12 Power Supply Rejection Ratio (PSRR)
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Bidirectional Operation
      2. 8.3.2 Rail-to-Rail Operation
      3. 8.3.3 1.8 V Logic Compatible Inputs
      4. 8.3.4 Integrated Pull-Down Resistor on Logic Pins
      5. 8.3.5 Fail-Safe Logic
      6. 8.3.6 Latch-Up Immune
      7. 8.3.7 Ultra-Low Charge Injection
    4. 8.4 Device Functional Modes
    5. 8.5 Truth Tables
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Switched Gain Amplifier - Discrete PGA
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curve
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 支持资源
    4. 10.4 Trademarks
    5. 10.5 静电放电警告
    6. 10.6 术语表
  12. 11Mechanical, Packaging, and Orderable Information

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机械数据 (封装 | 引脚)
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散热焊盘机械数据 (封装 | 引脚)
订购信息

6.7 ±15 V Dual Supply: Switching Characteristics 

VDD = +15 V ± 10%, VSS = –15 V ± 10%, GND = 0 V (unless otherwise noted) 
Typical at VDD = +15 V, VSS = –15 V, TA = 25℃  (unless otherwise noted)
PARAMETER TEST CONDITIONS TA MIN TYP MAX UNIT
tON Turn-on time from control input VS = 10 V
RL = 300 Ω, CL = 35 pF		 25°C 145 180 ns
–40°C to +85°C 190 ns
–40°C to +125°C 200 ns
tOFF Turn-off time from control input VS = 10 V
RL = 300 Ω, CL = 35 pF		 25°C 100 180 ns
–40°C to +85°C 195 ns
–40°C to +125°C 210 ns
tON (VDD) Device turn on time
(VDD to output)		 VDD rise time = 1 µs  
RL = 300 Ω, CL = 35 pF		 25°C 0.19 ms
–40°C to +85°C 0.2 ms
–40°C to +125°C 0.2 ms
tPD Propagation delay RL = 50 Ω , CL = 5 pF 25°C 500 ps
QINJ Charge injection VS = 0 V, CL = 100 pF  25°C -15 pC
OISO Off-isolation RL = 50 Ω , CL = 5 pF
VS = 0 V, f = 100 kHz		 25°C –70 dB
OISO Off-isolation RL = 50 Ω , CL = 5 pF
VS = 0 V, f = 1 MHz		 25°C –50 dB
XTALK Crosstalk RL = 50 Ω , CL = 5 pF
VS = 0 V, f = 100 kHz		 25°C –114 dB
XTALK Crosstalk RL = 50 Ω , CL = 5 pF
VS = 0 V, f = 1MHz		 25°C –93 dB
BW –3dB Bandwidth RL = 50 Ω , CL = 5 pF
VS = 0 V		 25°C 45 MHz
IL Insertion loss RL = 50 Ω , CL = 5 pF
VS = 0 V, f = 1 MHz		 25°C –0.18 dB
ACPSRR AC Power Supply Rejection Ratio VPP = 0.62 V on VDD and VSS
RL = 50 Ω , CL = 5 pF,
f = 1 MHz		 25°C –71 dB
THD+N Total Harmonic Distortion + Noise VPP = 15 V, VBIAS = 0 V
RL  =  10 kΩ , CL = 5 pF,
f = 20 Hz to 20 kHz		 25°C 0.0005 %
CS(OFF) Source off capacitance VS = 0 V, f = 1 MHz 25°C 25 pF
CD(OFF) Drain off capacitance VS = 0 V, f = 1 MHz 25°C 33 pF
CS(ON),
CD(ON)		 On capacitance VS = 0 V, f = 1 MHz 25°C 120 pF