ZHCS603D November   2011  – April 2022 SN65HVDA100-Q1

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. 说明(续)
  5. Revision History
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings (1) (1)
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
    7. 7.7 Dissipation Ratings
    8. 7.8 Typical Characteristics
  8. Parameter Measurement Information
    1. 8.1 17
  9. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1  LIN (Local Interconnect Network) Bus
        1. 9.3.1.1 LIN Transmitter Characteristics
        2. 9.3.1.2 LIN Receiver Characteristics
          1. 9.3.1.2.1 Termination
      2. 9.3.2  TXD (Transmit Input / Output)
      3. 9.3.3  RXD (Receive Output)
      4. 9.3.4  VSUP (Supply Voltage)
      5. 9.3.5  GND (Ground)
      6. 9.3.6  EN (Enable Input)
      7. 9.3.7  NWake (High Voltage Wake Up Input)
      8. 9.3.8  INH (Inhibit Output)
      9. 9.3.9  TXD Dominant State Timeout
      10. 9.3.10 Thermal Shutdown
      11. 9.3.11 Bus Stuck Dominant System Fault: False Wake-Up Lockout
      12. 9.3.12 Undervoltage on VSUP
      13. 9.3.13 Unpowered Device Does Not Affect the LIN Bus
    4. 9.4 Device Functional Modes
      1. 9.4.1 Operating States
      2. 9.4.2 Normal Mode
      3. 9.4.3 Sleep Mode
      4. 9.4.4 Wake-Up Events
        1. 9.4.4.1 Wake-Up Request (RXD)
        2. 9.4.4.2 Wake-Up Source Recognition (TXD)
      5. 9.4.5 Standby Mode
      6. 9.4.6 Mode Transitions
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
      1. 13.1.1 Related Documentation
    2. 13.2 接收文档更新通知
    3. 13.3 支持资源
    4. 13.4 Trademarks
    5. 13.5 Electrostatic Discharge Caution
    6. 13.6 术语表
  14. 14Mechanical, Packaging, and Orderable Information

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机械数据 (封装 | 引脚)
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订购信息

ESD Ratings

VALUEUNIT
V(ESD)Electrostatic dischargeHuman body model (HBM), per AEC Q100-002(1)All pins
HBM ESD classification level 3A
±4000V
LIN bus pin(2)
HBM ESD classification level 3B
±12000
NWake pin(3)
HBM ESD classification level 3B
±11000
Charged device model (CDM), per AEC Q100-011(1)
CDM ESD classification level C6
±1500
AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
Test method based upon AEC-Q100-002, LIN bus pin stressed with respect to GND.
Test method based upon AEC-Q100-002, NWake pin stressed with respect to GND.