ZHCS603D November   2011  – April 2022 SN65HVDA100-Q1

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 说明（续）
  5. 5 Revision History
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings (1) (1)
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
    7. 7.7 Dissipation Ratings
    8. 7.8 Typical Characteristics
  8. 8 Parameter Measurement Information
    1. 8.1 17
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1  LIN (Local Interconnect Network) Bus
        1. 9.3.1.1 LIN Transmitter Characteristics
        2. 9.3.1.2 LIN Receiver Characteristics
          1. 9.3.1.2.1 Termination
      2. 9.3.2  TXD (Transmit Input / Output)
      3. 9.3.3  RXD (Receive Output)
      4. 9.3.4  VSUP (Supply Voltage)
      5. 9.3.5  GND (Ground)
      6. 9.3.6  EN (Enable Input)
      7. 9.3.7  NWake (High Voltage Wake Up Input)
      8. 9.3.8  INH (Inhibit Output)
      9. 9.3.9  TXD Dominant State Timeout
      10. 9.3.10 Thermal Shutdown
      11. 9.3.11 Bus Stuck Dominant System Fault: False Wake-Up Lockout
      12. 9.3.12 Undervoltage on VSUP
      13. 9.3.13 Unpowered Device Does Not Affect the LIN Bus
    4. 9.4 Device Functional Modes
      1. 9.4.1 Operating States
      2. 9.4.2 Normal Mode
      3. 9.4.3 Sleep Mode
      4. 9.4.4 Wake-Up Events
        1. 9.4.4.1 Wake-Up Request (RXD)
        2. 9.4.4.2 Wake-Up Source Recognition (TXD)
      5. 9.4.5 Standby Mode
      6. 9.4.6 Mode Transitions
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
      1. 13.1.1 Related Documentation
    2. 13.2 接收文档更新通知
    3. 13.3 支持资源
    4. 13.4 Trademarks
    5. 13.5 Electrostatic Discharge Caution
    6. 13.6 术语表
  14. 14Mechanical, Packaging, and Orderable Information

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13.5 Electrostatic Discharge Caution

GUID-D6F43A01-4379-4BA1-8019-E75693455CED-low.gif This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.