SLVSKC6 December   2025 RES31A

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. Parameter Measurement Information
    1. 6.1 DC Measurement Configurations
    2. 6.2 AC Measurement Configurations
    3. 6.3 Error Notation and Units
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Ratiometric Matching for Low Gain Error
        1. 7.3.1.1 Absolute and Ratiometric Tolerances
      2. 7.3.2 Ratiometric Drift
      3. 7.3.3 Ultra-Low Noise
    4. 7.4 Device Functional Modes
  9. Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Amplifier Feedback Circuit
        1. 8.1.1.1 Amplifier Feedback Circuit Example
      2. 8.1.2 Voltage Divider Circuit
        1. 8.1.2.1 Voltage Divider Circuit Example
        2. 8.1.2.2 Voltage-Divider Circuit Drift
      3. 8.1.3 Discrete Difference Amplifier
        1. 8.1.3.1 Difference-Amplifier Common-Mode Rejection Analysis
        2. 8.1.3.2 Difference-Amplifier Gain Error Analysis
      4. 8.1.4 Discrete Instrumentation Amplifiers
      5. 8.1.5 Fully Differential Amplifier
      6. 8.1.6 Unconventional Circuits
        1. 8.1.6.1 Single-Channel Voltage Divider
        2. 8.1.6.2 Single-Channel Amplifier Gain
        3. 8.1.6.3 Unconventional Instrumentation Amplifiers
    2. 8.2 Typical Application
      1. 8.2.1 Common-Mode Shifting Input Stage
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Examples
  10. Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Development Support
        1. 9.1.1.1 PSpice® for TI
        2. 9.1.1.2 TINA-TI™ Simulation Software (Free Download)
        3. 9.1.1.3 TI Reference Designs
        4. 9.1.1.4 Analog Filter Designer
    2. 9.2 Documentation Support
      1. 9.2.1 Related Documentation
    3. 9.3 Receiving Notification of Documentation Updates
    4. 9.4 Support Resources
    5. 9.5 Trademarks
    6. 9.6 Electrostatic Discharge Caution
    7. 9.7 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

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Voltage-Divider Circuit Drift

As discussed in Section 8.1.2, the voltage-divider circuit error tVDx of the RES31A is related to the gain-circuit error tDx by one of the two following expressions (depending on the placement of RG and RIN):

Equation 31. G V D x = R IN x R I N x + R G x = G V D n o m 1 + t V D x t V D x = G nom × t D x G n o m × t D x + G n o m + 1
Equation 32. G V D x = R G x R I N x + R G x = G V D n o m 1 + t V D x t V D x = t D x G n o m × t D x + G n o m + 1

Therefore, the change in the voltage divider transfer function GVDx with temperature is a direct function of the change in tDx with temperature. Multiplying the temperature coefficient TCRratio by the change in ambient temperature gives the change in tDx, which is in turn substituted in the appropriate equation above to calculate the change in tVDx. The change in tVDx directly describes the change in GVDx.

As an example, consider a RES31A40 with Gnom = 4 and a circuit configuration as shown in Figure 8-4, with RX = RG1 and RY = RIN1. Assume tD1 is initially 85ppm and increases by 5ppm due to a 25°C increase in ambient temperature. The initial value of tVD1, before the temperature change, is calculated as:

Equation 33. t V D 1 = G nom × t D 1 G n o m × t D 1 + G n o m + 1 = –4 × 0.000085 4 × 0.000085 + 4 + 1 = –0.000068 = –68 ppm

The new value of tVD1 after the temperature change is calculated as:

Equation 34. t V D 1 = G nom × t D 1 G n o m × t D 1 + G n o m + 1 = –4 × 0.000090 4 × 0.000090 + 4 + 1 = –0.000072 = –72 ppm

In this first scenario, the shift in tD1 of 5ppm causes a shift in tVD1 of –4ppm.

If the circuit configuration is inverted so that RX = RIN1 and RY = RG1, then the initial value of tVD1 is calculated as:

Equation 35. t V D 1 = t D 1 G n o m × t D 1 + G n o m + 1 = 0.000085 4 × 0.000085 + 4 + 1 = 0.000017 = 17 ppm

The new value of tVD1 after the temperature change is calculated as:

Equation 36. t V D 1 = t D 1 G n o m × t D 1 + G n o m + 1 = 0.000090 4 × 0.000090 + 4 + 1 = 0.000018 = 18 ppm

In this second scenario, the shift in tD1 of 5ppm causes a shift in tVD1 of only 1ppm.