SNOS469K April   2000  – January 2017 LM8261

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Pin Configuration and Functions
  6. 5Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
    7. 5.7 Old Versus New Die Comparison
  7. 6Application and Implementation
    1. 6.1 Driving Capacitive Loads
    2. 6.2 Low-Side Current Measurement
    3. 6.3 Output Short Circuit Current and Dissipation Issues
    4. 6.4 Other Application Hints
    5. 6.5 Power Supply Recommendations
    6. 6.6 Layout
      1. 6.6.1 Layout Guidelines
  8. 7Device and Documentation Support
    1. 7.1 Documentation Support
      1. 7.1.1 Related Documentation
    2. 7.2 Receiving Notification of Documentation Updates
    3. 7.3 Support Resources
    4. 7.4 Trademarks
    5. 7.5 Electrostatic Discharge Caution
    6. 7.6 Glossary
  9. 8Revision History
  10. 9Mechanical, Packaging, and Orderable Information

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订购信息

Revision History

Changes from Revision J (January 2015) to Revision K (February 2026)

  • Removed (VS = 5 V, TA = 25°C, typical values unless specified) Go
  • Removed ±5% settling time 400 ns (500 pF, 100 mVPP step)Go
  • Updated GBWP from 21MHz to 24MHzGo
  • Updated Wide supply voltage range from 2.5V to 2.7V and from 30V to 32VGo
  • Updated Slew rate from 12V/µs to 35V/µsGo
  • Updated Supply current from 0.97mA to 1.35mAGo
  • Updated Output short circuit current from 53 mA/ −75 mA to ±125mAGo
  • Updated Input Voltage Noise from 15nV/ Hz to 12nV/ Hz Go
  • Updated THD+N from <0.05% to < 0.00022%Go
  • Updated the numbering format for tables, figures, and cross-references throughout the documentGo
  • Updated the description as per new die.Go
  • Updated Table and Footnotes as per new die specificationsGo
  • Updated Electrostatic discharge value for CDM from ±200V to ±1500VGo
  • Updated footnotesGo
  • Updated Supply Voltage minimum from 2.5V to 2.7V and maximum from 30V to 32VGo
  • Updated Junction-to-ambient thermal resistance from 325°C/W to 185.4°C/WGo
  • Changed Electrical characteristics from ±15V to ±16V.Go
  • Updated Table descriptionGo
  • Updated Input offset voltage test conditions to VCM =V Go
  • Removed Input bias current test conditions for VCM =14.5 V and curresponding value for range −40°C ≤ TA ≤ +125°CGo
  • Removed Input Offest current test conditions for VCM =±14.5 V and corresponding value for range −40°C ≤ TA ≤ +125°CGo
  • Updated Common Mode Rejection Ratio test conditions from VCM stepped from −15 V to 13 V to V < VCM < (V+) – 2V and from −65°C ≤ TJ ≤ +150°C to −40°C ≤ TA ≤ +125°CGo
  • Removed Common Mode Rejection Ratio test conditions and corresponding values for VCM stepped from 14V to 15V and for VCM stepped from −15V to 15VGo
  • Updated Power Supply Rejection Ratio test conditions from V+ = ±12V to ±15V to VCM= V, VS = 5V to 32V and from −65°C ≤ TJ ≤ +150°C to −40°C ≤ TA ≤ +125°CGo
  • Updated Power Supply Rejection Ratio typical value from 100dB to ±3.5μV/V and maximum value from 70dB to ±22μV/V Go
  • Removed Negative Power Supply Rejection RatioGo
  • Removed CMVR valuesGo
  • Updated VCM value minimum V and maximum V+ Go
  • Updated Open Loop Voltage Gain typical value 85dBGo
  • Removed Large Signal Voltage GainGo
  • Removed Output swing highGo
  • Updated Voltage Output Swing from Rail for RL=10kΩ from 14.83V to 15.94VGo
  • Updated Voltage Output Swing from Rail for RL=2kΩ from 14.73V to 15.8VGo
  • Updated Voltage Output Swing from Rail for RL=10kΩ from −14.91V to −15.94VGo
  • Updated Voltage Output Swing from Rail for RL=2kΩ from −14.83V to −15.8VGo
  • Updated Output Short Circuit Current from 60mA to 125mA typical and maximum from 40mA to ±62mA.Go
  • Removed all test conditions for Output Short Circuit Current Go
  • Updated Supply Current maximum from 1.50mA to 1.93mA and 1.90mA to 2.23mA Go
  • Updated Slew Rate from 15V/μs to 35V/μs Go
  • Removed Unity Gain FrequencyGo
  • Removed Gain Bandwidth maximum valueGo
  • Updated Phase margin typical value from 58° to 50°Go
  • Updated Input Voltage Noise Density typical value from 15nV/ √ hZ to 12nV/ √ hZ Go
  • Removed Full Power BandwidthGo
  • Updated Settling time typical value from 320ns to 430nsGo
  • Updated Total Harmonic Distortion +Noise from 0.01% to 113dBGo
  • Updated Open-Loop Gain and Phase vs Frequency plotGo
  • Updated Closed-Loop Gain vs Frequency plotGo
  • Updated Input Bias Current and Offset Current vs Common-Mode Voltage plotGo
  • Updated Output Voltage Swing vs Output Current (Sourcing) plotGo
  • Updated Output Voltage Swing vs Output Current (Sinking) plotGo
  • Updated Input Voltage Noise Spectral Density vs Frequency plotGo
  • Updated THD+N Ratio vs Frequency plotGo
  • Updated THD+N vs Output Amplitude plotGo
  • Updated Open-Loop Output Impedance vs Frequency plot Go
  • Updated Small-Signal Overshoot vs Capacitive Load plot Go
  • Added Old Versus New Die Comparison Go
  • Removed Block diagram and operational descriptionGo
  • Removed Estimating the Output Voltage Swing sectionGo
  • Removed TFT Application sectionGo
  • Added Low-Side Current Measurement sectionGo
  • Removed LM8261 Advantages sectionGo
  • Updated guidelines as per new dieGo
  • Removed Layout Example sectionGo

Changes from Revision I (March 2013) to Revision J (January 2015)

  • Added, updated, or revised the following sections: Pin Configuration and Functions, Specifications, Detailed Description , Application and Implementation, Power Supply Recommendations , Layout , Device and Documentation Support , and Mechanical, Packaging, and Orderable Information section Go
  • Changed from -1.0 V to -0.8 V in Section 5 Go

Changes from Revision H (March 2013) to Revision I (March 2013)

  • Changed layout of National Data Sheet to TI formatGo