ZHCSSZ8D may   2004  – august 2023 LM386

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 LM386 with Gain = 20
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Gain Control
          2. 9.2.1.2.2 Input Biasing
        3. 9.2.1.3 Application Curve
      2. 9.2.2 LM386 with Gain = 200
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
        3. 9.2.2.3 Application Curve
      3. 9.2.3 LM386 with Gain = 50
        1. 9.2.3.1 Design Requirements
        2. 9.2.3.2 Detailed Design Procedure
        3. 9.2.3.3 Application Curve
      4. 9.2.4 Low Distortion Power Wienbridge Oscillator
        1. 9.2.4.1 Design Requirements
        2. 9.2.4.2 Detailed Design Procedure
        3. 9.2.4.3 Application Curve
      5. 9.2.5 LM386 with Bass Boost
        1. 9.2.5.1 Design Requirements
        2. 9.2.5.2 Detailed Design Procedure
        3. 9.2.5.3 Application Curve
      6. 9.2.6 Square Wave Oscillator
        1. 9.2.6.1 Detailed Design Procedure
        2. 9.2.6.2 Application Curve
      7. 9.2.7 AM Radio Power Amplifier
        1. 9.2.7.1 Design Requirements
        2. 9.2.7.2 Detailed Design Procedure
        3. 9.2.7.3 Application Curve
  11. 10Power Supply Recommendations
  12. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Examples
  13. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Development Support
    2. 12.2 Documentation Support
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 Community Resources
    5. 12.5 Trademarks
  14.   Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • D|8
  • P|8
  • DGK|8
散热焊盘机械数据 (封装 | 引脚)
订购信息
9.2.1.2.2 Input Biasing

The schematic shows that both inputs are biased to ground with a 50 kΩ resistor. The base current of the input transistors is about 250 nA, so the inputs are at about 12.5 mV when left open. If the dc source resistance driving the LM386 is higher than 250 kΩ it will contribute very little additional offset (about 2.5 mV at the input, 50 mV at the output). If the dc source resistance is less than 10 kΩ, then shorting the unused input to ground will keep the offset low (about 2.5 mV at the input, 50 mV at the output). For dc source resistances between these values we can eliminate excess offset by putting a resistor from the unused input to ground, equal in value to the dc source resistance. Of course all offset problems are eliminated if the input is capacitively coupled.

When using the LM386 with higher gains (bypassing the 1.35 kΩ resistor between pins 1 and 8) it is necessary to bypass the unused input, preventing degradation of gain and possible instabilities. This is done with a 0.1 μF capacitor or a short to ground depending on the dc source resistance on the driven input.