SNVSA38 November   2014 LM3281

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 Handling Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 System Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Small Solution Size
      2. 7.3.2  Automatic Analog Bypass with Low Dropout
      3. 7.3.3  Low IQ
      4. 7.3.4  Forced PWM Operation
      5. 7.3.5  High Maximum Current
      6. 7.3.6  High-Capacitance Load and Line Transient Performance
      7. 7.3.7  Soft Start
      8. 7.3.8  Thermal Overload Protection
      9. 7.3.9  Current Limit
      10. 7.3.10 Power-On Reset
    4. 7.4 Device Functional Modes
      1. 7.4.1 PWM Mode
      2. 7.4.2 Forced PWM (FPWM) Mode
      3. 7.4.3 Analog Bypass Mode
      4. 7.4.4 ECO (Economy) Mode
      5. 7.4.5 Shutdown Mode
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
        1. 8.2.1.1 Suggested Passive Components
          1. 8.2.1.1.1 LM3281 Inductor Selection
          2. 8.2.1.1.2 Total Effective Output Capacitance (COUT + CLOAD1 + CLOAD2)
          3. 8.2.1.1.3 LM3281 Capacitor (CIN and COUT) Selection
          4. 8.2.1.1.4 Recommended Load Bypass Capacitors (CLOAD1 and CLOAD2)
          5. 8.2.1.1.5 Alternate Output Capacitor Configuration
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 COUT-to-CLOAD Inductance
      2. 10.1.2 LM3281-to-CIN Inductance
    2. 10.2 Layout Example
    3. 10.3 DSBGA Package Assembly And Use
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

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11 Device and Documentation Support

11.1 Device Support

11.1.1 Third-Party Products Disclaimer

TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.

11.2 Documentation Support

11.2.1 Related Documentation

For related documentation, see the following:

Texas Instruments Application Note 1112 DSBGA Wafer Level Chip Scale Package (SNVA009).

11.3 Trademarks

All other trademarks are the property of their respective owners.

11.4 Electrostatic Discharge Caution

esds-image

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

11.5 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.