ZHCSLR8B june   2021  – april 2023 JFE150

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. 7 Parameter Measurement Information
    1. 7.1 AC Measurement Configurations
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Ultra-Low Noise
      2. 8.3.2 Low Gate Current
      3. 8.3.3 Input Protection
    4. 8.4 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Input Protection Diodes
      2. 9.1.2 Capacitive Transducer Input Stage
      3. 9.1.3 Common-Source Amplifier
      4. 9.1.4 Composite Amplifiers
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Device Support
      1. 10.1.1 Development Support
        1. 10.1.1.1 PSpice® for TI
        2. 10.1.1.2 TINA-TI™ 仿真软件（免费下载）
        3. 10.1.1.3 TI 参考设计
        4. 10.1.1.4 滤波器设计工具
    2. 10.2 Documentation Support
      1. 10.2.1 Related Documentation
    3. 10.3 接收文档更新通知
    4. 10.4 支持资源
    5. 10.5 Trademarks
    6. 10.6 静电放电警告
    7. 10.7 术语表
  12. 11Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

4 Revision History

Changes from Revision A (November 2021) to Revision B (April 2023)

  • 将 DBV 封装（SOT-23，5）从预发布更改为量产数据（正在供货）并添加了相关内容Go
  • 将器件概要 表中的参数说明从“栅源电压”更改为“栅源击穿电压”，并从“漏源电压”更改为“漏源击穿电压”，以便与电气特性 保持一致Go
  • 将器件概要 表中的“漏源饱和电流”值从 36mA 更改为 35mA，以便与电气特性 保持一致Go
  • Changed VCH and VCL pin type and description in Pin Functions to reflect optional nature of diode clampsGo
  • Changed Figure 6-2, Drain-to-Source Current vs Drain-to-Source Voltage, to show correct VGS valuesGo
  • Changed Figure 8-1, VDS vs IDS , to show correct VGS values and improve image resolutionGo
  • Added JFE150EVM user's guide and JFE150 Ultra-Low-Noise Pre-Amp application note to Related Documentation Go

Changes from Revision * (June 2021) to Revision A (November 2021)

  • Changed VGS minimum from –1.1 V to –1.3 V (100 µA), –0.9 V to –1.1 V (2 mA) Go
  • Changed Figure 6-3, Drain-to-Source Current vs Drain-to-Source Voltage, to show correct VGS valuesGo