ZHCSLR8B june   2021  – april 2023 JFE150

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. 7 Parameter Measurement Information
    1. 7.1 AC Measurement Configurations
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Ultra-Low Noise
      2. 8.3.2 Low Gate Current
      3. 8.3.3 Input Protection
    4. 8.4 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Input Protection Diodes
      2. 9.1.2 Capacitive Transducer Input Stage
      3. 9.1.3 Common-Source Amplifier
      4. 9.1.4 Composite Amplifiers
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Device Support
      1. 10.1.1 Development Support
        1. 10.1.1.1 PSpice® for TI
        2. 10.1.1.2 TINA-TI™ 仿真软件（免费下载）
        3. 10.1.1.3 TI 参考设计
        4. 10.1.1.4 滤波器设计工具
    2. 10.2 Documentation Support
      1. 10.2.1 Related Documentation
    3. 10.3 接收文档更新通知
    4. 10.4 支持资源
    5. 10.5 Trademarks
    6. 10.6 静电放电警告
    7. 10.7 术语表
  12. 11Mechanical, Packaging, and Orderable Information

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8.4 Device Functional Modes

The JFE150 functionality is identical to standard N-channel depletion JFET devices. The gate-to-source (VGS) voltage, drain-to-source voltage (VDS) and drain-to-source current (IDS) determine the region of operation.

  • For VGS < VGSC: JFE150 conduction channel is closed; IDS is only determined by junction leakage current.
  • For VGS > VGSC: Two modes of operation can exist depending on VDS. When VDS is less than the linear (saturation) region threshold (see Figure 9-2), the device operates in the linear region, meaning that the device behaves as a resistor connected from drain-to-source with minimal variation from any changes in VGS. When VDS is greater than the linear (saturation) region threshold, IDS has a strong dependance on VGS, where the relationship is described by the parameter gm.
GUID-20210615-CA0I-NX0F-TPFR-HBGJDHWTWHSP-low.svg Figure 8-1 VDS vs IDS