ZHCSME1C August   2018  – June 2021 DS250DF230

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 说明（续）
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Switching Characteristics
    8. 7.8 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Device Data Path Operation
      2. 8.3.2  Signal Detect
      3. 8.3.3  Continuous Time Linear Equalizer (CTLE)
      4. 8.3.4  Variable Gain Amplifier (VGA)
      5. 8.3.5  Cross-Point Switch
      6. 8.3.6  Decision Feedback Equalizer (DFE)
      7. 8.3.7  Clock and Data Recovery (CDR)
        1. 8.3.7.1 CDR Bypass (Raw) Mode
        2. 8.3.7.2 CDR Fast Lock Mode
      8. 8.3.8  Calibration Clock
      9. 8.3.9  Differential Driver With FIR Filter
        1. 8.3.9.1 Setting the Output VOD, Pre-Cursor, and Post-Cursor Equalization
        2. 8.3.9.2 Output Driver Polarity Inversion
        3. 8.3.9.3 Slow Slew Rate
      10. 8.3.10 Debug Features
        1. 8.3.10.1 Pattern Generator
        2. 8.3.10.2 Pattern Checker
        3. 8.3.10.3 Eye-Opening Monitor
      11. 8.3.11 Interrupt Signals
    4. 8.4 Device Functional Modes
      1. 8.4.1 Supported Data Rates
      2. 8.4.2 SMBus Master Mode
      3. 8.4.3 Device SMBus Address
    5. 8.5 Programming
      1. 8.5.1 Bit Fields in the Register Set
      2. 8.5.2 Writing to and Reading from the Global/Shared/Channel Registers
    6. 8.6 Register Maps
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Front-Port Jitter Cleaning Applications
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curves
      2. 9.2.2 Active Cable Applications
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
        3. 9.2.2.3 Application Curves
      3. 9.2.3 Backplane and Mid-Plane Applications
        1. 9.2.3.1 Design Requirements
        2. 9.2.3.2 Detailed Design Procedure
        3. 9.2.3.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Examples
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Development Support
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 接收文档更新通知
    4. 12.4 支持资源
    5. 12.5 Trademarks
  13. 13Electrostatic Discharge Caution
  14. 14术语表
  15. 15Mechanical, Packaging, and Orderable Information

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订购信息

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VDDABSMAX Supply Voltage, VDD to GND –0.5 2.75 V
VIO2.5V-ABSMAX 2.5V I/O voltage (LVCMOS and Analog) –0.5 2.75 V
VIO3.3V-ABSMAX 3.3V I/O Voltage (SDA, SDC, INT_N, READ_EN) –0.5 4 V
VINABSMAX Signal Input voltage(RXnP, RXnN) –0.5 2.75 V
VOUTABSMAX Signal Output voltage(TXnP, TXnN) –0.5 2.75 V
TJABSMAX Junction Temperature  150 °C
Tstg Storage Temperature range –40 150 °C
(1) Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.