ZHCSME1C August   2018  – June 2021 DS250DF230

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. 说明(续)
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Switching Characteristics
    8. 7.8 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Device Data Path Operation
      2. 8.3.2  Signal Detect
      3. 8.3.3  Continuous Time Linear Equalizer (CTLE)
      4. 8.3.4  Variable Gain Amplifier (VGA)
      5. 8.3.5  Cross-Point Switch
      6. 8.3.6  Decision Feedback Equalizer (DFE)
      7. 8.3.7  Clock and Data Recovery (CDR)
        1. 8.3.7.1 CDR Bypass (Raw) Mode
        2. 8.3.7.2 CDR Fast Lock Mode
      8. 8.3.8  Calibration Clock
      9. 8.3.9  Differential Driver With FIR Filter
        1. 8.3.9.1 Setting the Output VOD, Pre-Cursor, and Post-Cursor Equalization
        2. 8.3.9.2 Output Driver Polarity Inversion
        3. 8.3.9.3 Slow Slew Rate
      10. 8.3.10 Debug Features
        1. 8.3.10.1 Pattern Generator
        2. 8.3.10.2 Pattern Checker
        3. 8.3.10.3 Eye-Opening Monitor
      11. 8.3.11 Interrupt Signals
    4. 8.4 Device Functional Modes
      1. 8.4.1 Supported Data Rates
      2. 8.4.2 SMBus Master Mode
      3. 8.4.3 Device SMBus Address
    5. 8.5 Programming
      1. 8.5.1 Bit Fields in the Register Set
      2. 8.5.2 Writing to and Reading from the Global/Shared/Channel Registers
    6. 8.6 Register Maps
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Front-Port Jitter Cleaning Applications
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curves
      2. 9.2.2 Active Cable Applications
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
        3. 9.2.2.3 Application Curves
      3. 9.2.3 Backplane and Mid-Plane Applications
        1. 9.2.3.1 Design Requirements
        2. 9.2.3.2 Detailed Design Procedure
        3. 9.2.3.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Examples
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Development Support
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 接收文档更新通知
    4. 12.4 支持资源
    5. 12.5 Trademarks
  13. 13Electrostatic Discharge Caution
  14. 14术语表
  15. 15Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

CDR Fast Lock Mode

The DS250DF230 offers a CDR Fast Lock Mode option to enable a CDR lock time as fast as 2 ms. See CDR lock time parameter in Electrical Characteristics.

Normally, CDR acquisition lock time is gated by multiple factors, most notably until a minimum horizontal and vertical eye opening (HEO/VEO) is observed at the receiver, causing typical CDR lock times of up to 100 ms. In CDR Fast Lock Mode, the DS250DF230 outputs retimed data as soon as CDR lock is achieved based on PPM tolerance and VCO input comparator voltage requirements, removing minimum HEO/VEO requirements. This results in active retimed output data within 10 ms or less. Meanwhile, the EQ adaptation continues to run in the background and adjusts CTLE and DFE settings until optimal. As a result, when in CDR Fast Lock Mode, there may be bit errors observed in the retimed data output until EQ adaptation completes.

Note: CDR Fast Lock Mode is intended only for use cases with low input insertion loss where some retimer input eye opening can be ensured for all CTLE table indices. For channels >6dB IL at 13 GHz, it is recommended to disable CDR fast lock and instead decrease the EOM timer threshold (EOM_TIMER_THR) value to reduce the CDR lock acquisition time.