ZHCSQ30 December 2022 DRV8317
PRODUCTION DATA
The device is fully protected against any cross conduction of MOSFETs - during the switching of high-side and low-side MOSFETs, DRV8317 avoids shoot-through events by inserting a dead time (tdead). This is implemented by sensing the gate-source voltage (VGS) of the high-side and low-side MOSFETs and ensuring that VGS of high-side MOSFET has dropped below turn-off level before switching on the low-side MOSFET of same half-bridge (or vice-versa) as shown in Figure 8-11 and Figure 8-12. The VGS of the high-side and low-side MOSFETs (VGS_HS and VGS_LS) shown in Figure 8-12 are DRV8317 internal signals.