ZHCSBP4C September   2013  – December 2016 DRV8303

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Current Shunt Amplifier Characteristics
    7. 6.7 SPI Characteristics (Slave Mode Only)
    8. 6.8 Gate Timing and Protection Switching Characteristics
    9. 6.9 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Three-Phase Gate Driver
      2. 7.3.2 Current Shunt Amplifiers
      3. 7.3.3 Protection Features
        1. 7.3.3.1 Power Stage Protection
        2. 7.3.3.2 Overcurrent Protection (OCP) and Reporting
        3. 7.3.3.3 Undervoltage Protection (UVLO)
        4. 7.3.3.4 Overvoltage Protection (GVDD_OV)
        5. 7.3.3.5 Overtemperature Protection
        6. 7.3.3.6 Fault and Protection Handling
      4. 7.3.4 Start-Up and Shutdown Sequence Control
    4. 7.4 Device Functional Modes
      1. 7.4.1 EN_GATE
      2. 7.4.2 DTC
      3. 7.4.3 VDD_SPI
      4. 7.4.4 DC_CAL
    5. 7.5 Programming
      1. 7.5.1 SPI Communication
        1. 7.5.1.1 SPI
        2. 7.5.1.2 SPI Format
    6. 7.6 Register Maps
      1. 7.6.1 Read / Write Bit
      2. 7.6.2 Address Bits
      3. 7.6.3 SPI Data Bits
        1. 7.6.3.1 Status Registers
        2. 7.6.3.2 Control Registers
        3. 7.6.3.3 Overcurrent Adjustment
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Gate Driver Power-Up Sequencing Errata
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Gate Drive Average Current Load
        2. 8.2.2.2 Overcurrent Protection Setup
        3. 8.2.2.3 Sense Amplifier Setup
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
    1. 9.1 Bulk Capacitance
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 文档支持
      1. 11.1.1 相关文档
    2. 11.2 接收文档更新通知
    3. 11.3 社区资源
    4. 11.4 商标
    5. 11.5 静电放电警告
    6. 11.6 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

11 器件和文档支持

11.1 文档支持

11.1.1 相关文档

请参阅如下相关文档：

11.2 接收文档更新通知

要接收文档更新通知，请导航至 ti.com 上的器件产品文件夹。请单击右上角的通知我 进行注册，即可收到任意产品信息更改每周摘要。有关更改的详细信息，请查看任意已修订文档中包含的修订历史记录。

11.3 社区资源

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.

    TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
    Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.

11.4 商标

E2E is a trademark of Texas Instruments.

All other trademarks are the property of their respective owners.

11.5 静电放电警告

esds-image

这些装置包含有限的内置 ESD 保护。 存储或装卸时，应将导线一起截短或将装置放置于导电泡棉中，以防止 MOS 门极遭受静电损伤。

11.6 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.