ZHCSFB0D June   2016  – November 2023 DRV2510-Q1

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Analog Input and Configurable Pre-amplifier
      2. 7.3.2 Pulse-Width Modulator (PWM)
      3. 7.3.3 Designed for low EMI
      4. 7.3.4 Device Protection Systems
        1. 7.3.4.1 Diagnostics
          1. 7.3.4.1.1 Load Diagnostics
        2. 7.3.4.2 Faults During Load Diagnostics
        3. 7.3.4.3 Protection and Monitoring
    4. 7.4 Device Functional Modes
      1. 7.4.1 Operation in Shutdown Mode
      2. 7.4.2 Operation in Standby Mode
      3. 7.4.3 Operation in Active Mode
    5. 7.5 Programming
      1. 7.5.1 General I2C Operation
      2. 7.5.2 Single-Byte and Multiple-Byte Transfers
      3. 7.5.3 Single-Byte Write
      4. 7.5.4 Multiple-Byte Write and Incremental Multiple-Byte Write
      5. 7.5.5 Single-Byte Read
      6. 7.5.6 Multiple-Byte Read
    6. 7.6 Register Map
      1. 7.6.1 Address: 0x01
      2. 7.6.2 Address: 0x02
      3. 7.6.3 Address: 0x03
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Single-Ended Source
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Optional Components
          2. 8.2.1.2.2 Capacitor Selection
          3. 8.2.1.2.3 Solenoid Selection
          4. 8.2.1.2.4 Output Filter Considerations
        3. 8.2.1.3 Application Curves
        4. 8.2.1.4 Differential Input Diagram
  10. 9 Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 第三方产品免责声明
    2. 11.2 接收文档更新通知
    3. 11.3 支持资源
    4. 11.4 Trademarks
    5. 11.5 静电放电警告
    6. 11.6 术语表
  13. 12Mechanical, Packaging, and Orderable Information

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6.5 Electrical Characteristics

TA = 25°C, AVCC = VDD = 12 V, RL = 5 Ω (unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
| VOS |Output offset voltage (measured differentially)VI = 0 V, Gain = 20 dB–2525mV
IVDDQuiescent supply currentNo load or filter16mA
IVDD(SD)Quiescent supply current in shutdown modeNo load or filter520µA
IVDD(STDBY)Quiescent supply current in standby modeNo load or filter7mA
rDS(on)Drain-source on-state resistance, measured pin to pinTJ = 25°C180mΩ
GGainP(o) = 1 W192021dB
252627
313233dB
353637
VREGRegulator voltage6.46.97.4V
VOOutput voltage (measured differentially)20V
PSRRPower supply ripple rejectionVDD = 12 V + 1 Vrms at 1 kHz75dB
VICMINInput common-mode min0.3V
VICMAXInput common-mode max4.4
CMRRCommon-mode rejection ratiof = 1 kHz, 100 mVrms referenced to GND. Gain = 20 dB63dB
fOSCOscillator frequency
(with PWM duty cycle < 96%)		400kHz
500
Output resistance in shutdown10MΩ
Resistance to detect a short from OUT pin(s) to VDD or GND200Ω
Open-circuit detection threshold7595120Ω
Short-circuit detection threshold0.91.21.5Ω
Power-on threshold4.1V
Thermal trip point150°C
Thermal hysteresis15°C
Over-current trip point3.5A
Over-voltage trip point21V
Over-voltage hysteresis0.6V
Under-voltage trip point4V
Under-voltage hysteresis0.25V
INTZ Report
INTZ pin output voltage for logic-level high (open-drain logic output)External 47-kΩ pullup resistor to 3.3 V2.4V
INTZ pin output voltage for logic-level low (open-drain logic output)External 47-kΩ pullup resistor to 3.3 V0.5V